| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
|
0603B224M250LT Datasheet 3. High noise environments. Writing to EEPROM in a noisy environment can be challenging. When severe noise or power fluctuations are present, the long write time of EEPROM creates a window of vulnerability during which the write can be corrupted. The fast write of FRAM is completed within a microsecond. This time is typically too short for noise or power fluctuation to disturb it. 0603B224M250LT Price O INDUSTRY STANDARD PINOUTS O INDUSTRY STANDARD PACKAGE O LOW PROFILE 0.4 INCH (10MM) O SHORT CIRCUIT PROTECTION O TEMPERATURE SHUTDOWN O REMOTE ON/OFF (OPTIONAL) O LOW RADIATED EMISSIONS 0603B224M250LT on stock Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 5 V logic compatible input leve Control of power MOSFET and supply of overload protection circuits derived from input Low operating input current ESD protection on input pin Overvoltage clamping for turn o of inductive loads
|
||||||||||||||||||||||||||||||||||||||||||
