MOTMap-1230  > 2BD5-RR07

suppliers of 2BD5-RR07 and PDF data of 2BD5-RR07

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
2BD5-RR07 AGILENT  BGA  00+   
    A-RICH HK LECTRON CO.,LIMITED
  • Contact:JING ZHOU
  • Tel:86-755-33377586
  • Fax:86-755-33377578
  • Email: ARICH2@yahoo.cn


2BD5-RR07 AGILENT  BGA  08+    3000 
    shenzhen zexinke Electronics ..
  • Contact:sam
  • Tel:86-755-82567399
  • Fax:86-0755-82539822
  • Email: cec_sale@yeah.net

2BD5-RR07 Datasheet
All Intersil semiconductor products are manufactured, assembled and tested under IS09000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No Iicense is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com
2BD5-RR07 Price

Parameter Symbol Values Unit
Collector-emitter voltage VCE 1 200 V
Collector-gate voltage RGE = 20 kl VCGR 1 200
Gate-emitter voltage E ±20
DC collector current TC = 25 aC TC = 90 aC C 25 1 7 A
Pulsed collector current, tp = 1 ms TC = 25 aC TC = 90 aC /Cpuls 50 34
Avalanche energy, single pulse /C = 25 A, VCC = 50 V, RGE = 25 L = 200 pH, Tj = 25 aC EAS 65 mJ
Power dissipation TC = 25 aC Ptot 300 W
Chip or operating temperature Tj -55+150 aC
Storage temperature Tstg -55+150


L n o L n o L n o L O O r _ L O C N O V _ L O C U ( d d ) ' 0 N V I I U V d V O N O U O N n r

Transconductance VDS> 2 * /D . RDS(on)max, /D = 4 A 9fs 2.5 6.8 S
Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss 1 950 2600 pF
Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss 1 90 285
Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 1 1 0 1 70
Turn-on delay time VDD = 30 V, VGS = 10 V, /D = 2.6 A RGS = so I td (on) 25 40 ns
Rise time VDD = 30 V, VGS = 10 V, /D = 2.6 A RGS = so I tr 1 25 1 90
Turn-off delay time VDD = 30 V, VGS = 10 V, /D = 2.6 A RGS = so I td (off) 480 640
Fall time VDD = 30 V, VGS = 10 V, /D = 2.6 A RGS = so I tf 1 55 21 0