| Parameter | A Versionsl | B Versionsl | Units | Test Conditions/Comments |
| DYNAMIC PERFORMANCE2 Signal to (Noise + Distortion) Rati03 @ +25'fC TMIN to TMAX Total Harmonic Distortion (THD)3 Peak Harmonic or Spurious Noise3 Intermodulation Distortion (IMD)3 2nd Order Terms 3rd Order Terms | 78 77 -86 -92 -92 -92 | 78 77 -86 -92 -92 -92 | dB min dB min dB max dB typ dB typ dB typ | fIN = 70 kHz Sine Wave, fSAMPLE = 160 kHz See Figure 14 fIN = 10 kHz Sine Wave, fSAMPLE = 160 kHz, Typically -87 dB. See Figure 15 fIN = 10 kHz Sine Wave, fSAMPLE = 160 kHz fa = 9 kHz, fb = 9.5 kHz, fSAMPLE = 160 kHz |
| DC ACCURACY Resolution Minimum Resolution for Which No Missing Codes Are Guaranteed Relative Accuracy3 Differential Nonlinearity3 AD7894-2 Positive Gain Error3 Unipolar Offset Error AD7894-10, AD7894-3 0nly Positive Gain Error3 Negative Gain Error3 Bipolar Zero Error | 14 14 +2 -1 to +1.5 +12 +8 +8 +8 +10 | 14 14 +1.5 -1 to +1.5 +10 +6 +6 +6 +8 | Bits Bits LSB max LSB max LSB max LSB max LSB max LSB max LSB max | |
| ANALOG INPUT AD7894-10 Input Voltage Range Input Current AD7894-3 Input Voltage Range Input Current AD7894-2 Input Voltage Range Input Current | +10 t) +2.5 1.5 0 to +2.5 500 | +10 +2.5 1.5 0 to +2.5 500 | V mA max V mA max V nA max | See Analog Input Section See Analog Input Section |
| REFERENCE INPUT REF IN Input Voltage Range Input Current Input Capacitance4 | 2.375/2.625 1 10 | 2.375/2.625 1 10 | V minN max max pF max | 2.5 V±5% |
| LOGIC INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IIN Input Capacitance, CIN4 | 2.4 0.8 +10 10 | 2.4 0.8 +10 10 | V min V max oA max pF max | VDD = 5 V+ 5% VDD = 5 V+ 5% VIN = 0 V to VDD |
| LOGIC OUTPUTS Output High Voltage, VOH Output Low Voltage, VOL Output Coding AD7894-10, AD7894-3 AD7894-2 | 4.0 0.4 Twos Con Straight (Natu] | 4.0 0.4 iplement :al) Binary | V min V max | ISOURCE = 400 ccA ISINK = 1.6 mA |
| CONVERSION RATE Conversion Time Mode l Operation Mode 2 0peration5 Track/Hold Acquisition Time3 | 5 10 O35 | 10 0.35 | aS max cS max ccS max | |
| SAMPLE AND HOLD -3 dB Small Signal Bandwidth Aperture Jitter | 7.5 50 | 7.5 50 | MHz typ ps typ | |
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| Drain to Source Leakage Current (VDS = 80 V, VGS = 0 V) | IDSS | | 20 | 100 | yA |
| Gate Body Leakage Current (VGS =10 V VDS = 0 V) (VGS = 10 V, VDS = 0 V, Tj = 1250C) | IGSS IGSS | | 3.0 6.0 | 10 20 | yA |
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450MXC100M20X45 on stock Thermal Resistance vs Mounting Pad Area The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM, in an application. Therefore the application's ambient temperature, TA (oC), and thermal resistance ROJA (oC/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part.
Notes: 1. Stress greaterthan those listed underABSOLUTE MAXIMUM RATINGS may cause perma- nent damage tothe device.This is a stress rating only and functionaloperation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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| Ve= 0.2H3 | | | | | | ve= 0.2H2 | |
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| | T | | | | | ---- | | I | | j | |
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| Ve= | 3.0, H | 2 | | | | Ve= 3.0H3 | | | | |
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