| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| 4LW21-6 | ST | 8/DIP | 08+/09+ | 全新原装，欢迎订购！ | 1000 |
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| 4LW21-6 | ST | O8+ | 500000 | SMD |
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| 4LW21-6 | ST | 8/DIP | 92 | 1000 |
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| 4LW21-6 | ST | O7+ | 500000 |
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| 4LW21-6 | ST | 8/DIP | 07+/08+ | 10000 |
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4LW21-6 Datasheet ( o a ) N a U U n o u a o o i u a 1 3 0 I N a U U n o u a o o i u a v o 4LW21-6 on stock
Charactenstics <Tam0 = 250C) Wavelength at peak emission al IF = 10 mA Wavelength at peak emission al IF = 100 mA, ,.,'pulse= 20 ms. Duly cycle - 1 12 Wavelenglh al peak emssion at IF - 1 A. tV,ise-100 VS. Duty cycle-1 100 Spectral bandwidth al IF = 10 mA Hatf angle Active chip area Dimens~ons ot active ch~p area Distance chip surface to case surface Switching time (le from 10% t0 90'/o. and from 90% t0 10% IF:100 mA) Capaotance(VR=O\< f=l MHz} Forward Voltage (IF = 100 mA.1g, = 20 ms} (IF=1A,tOu e=100ps} Breakdown voltage (IR = 10 UA) Reverse current (Vca = 5 V) Temperature coeflicient of le or {be Temperature coefticienl of VF Temperature coefficient of Xpeak Production Data Datasheets contain final specifications current on publication date. Supply of products conforms to Wolfson Microelectronics' Terms and conditions. |
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