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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
594D106X9025B2T E3	VISHAY		2009+ROHS		62000	BONASE(HK) ELECTRONICS CO., L.. Contact:Vincent Tel:86-0755-82579312 Fax:86-0755-83239040 Email: bonase@vip.163.com
594D106X9025B2T E3	VISHAY		2009+ROHS		62000	BONASE(HK) ELECTRONICS CO., L.. Contact:Vincent Tel:86-755-82579312 Fax:86-755-8323-9040 Email: bonase@vip.163.com

594D106X9025B2T E3 Datasheet

Vcc for Flash Vcc for SRAM GND for Flash Flash/SRAM common GND Flash/SRAM common Address Address for Flash Address for SRAM Flash/SRAM common Data l/0 Flash Chip Enable SRAM Chip Enable :SRAM Chip Enable :Flash Output Enable :SRAM Output Enable :Flash Write Enable :SRAM Write Enable :Flash Write Protect :Flash Reset Power Down :Flash Ready /Busy :SRAM Lower Byte
594D106X9025B2T E3 on stock

PULSE DURATION = 250ccs DUTY CYCLE = 0.5% MAX VDD = 15V		550,/j	c
		\|f	1750C


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NOTE: 1. These inputs are normally wired to Vcc, GND, or unconnected. Internal termination resistors bias unconnected inputs to Vcc/2. If these inputs are switched, the function and timing of the outputs may be glitched, and the PLL may require an additional tLOCK time before all datasheet limits are achieved.

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
-VLG	Inductive load turn-off Negative load voltagel	VIG = 0 V; IL = 7.5 A; tp = 300 ~s ' J	1 5	20	25	v
td se IL	Short circuit load protection2 Response time Load current prior to turn-off	VIG = 5 V; RL " io ml VIG = 5V t < td se		90 42		0CS A
IL(lim)	Overload protection3 Load current limiting	VBL = 9 V; tp = 300 ~s	28	40	52	A

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