60CDQ045 Datasheet Low capacitance bi-directional double ESD protection diode in the small SOT23 plastic package designed to protect 2 data lines from the damage caused by Electro Static Discharge (ESD) and other transients. 60CDQ045 on stock| Drain- source breakdown voltage VGS = 0 V, /D = -0.25 mA, Tj = 25 0C | V(BR)DSS | -50 | | | V | | Gate threshold voltage VGS= VDS, /D = 1 mA | VGS(th) | -2.1 | -3 | -4 | | Zero gate voltage drain current VDS = -50 V, VGS = 0 V, Tj = 25 aC VDS = -50 V, VGS = 0 V, Tj = 125 aC | /DSS | | -0.1 -10 | -1 -100 | UA | | Gate-source leakage current VGS = -20 V, VDS = OV | /GSS | | -10 | -100 | nA | | Drain-Source on-resistance VGS = -10 V, /D = -14 A | RDS(on) | | 0.12 | 0.15 | 1 | | | | | | |
( S _ L - I O A ) _ s ) a o A I O A _ I I V x J O _ L u T I O O | Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit | | gfs | Forward Transconductance | VDS = 13 V ID = 10 A | 1 3 | 1 7 | | S | | Coss | Output Capacitance | VDS = 13 V f= 1 MHz Vin = 0 | | 500 | 800 | pF | | | | | | | |
|
