659/CRIA Datasheet| | IVGS =-ov. f = 1MHz | | | ICrss -;:: . uga. uas J"uriILU | | | lcoss = cas Cq0 | | | | | | | | | | | | | | | | | | | | | | | | | | | | uiSf I | | | | | | | | | | C | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | cr | | | | | | | | | | | | | | | | | | | | | | | | | | 659/CRIA Price| Maximum Instantaneous Forward Voltage Drop (Note 2) (iF = 3 Amps, Tc = 25YC) (iF = 3 Amps, Tc = 125YC) (iF = 6 Amps, Tc = 25IC) (iF = 6 Amps, Tc = 125YC) | VF | 1 0 96 1.2 1 13 | V | | Maximum Instantaneous Reverse Current (Note 2) (Tj = 25YC, Rated dc Voltage) (Tj = 125IC, Rated dc Voltage) | IR | 5 250 | ¨A | | Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amps/ys, VR = 30 V, Tj = 25YC) (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, Tj = 25IC) | trr | 35 25 | ns | | | | | 659/CRIA on stock Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 VO at l/8". | | | | | pc | | f = IOOMHz Vrn -6.OV | | | j | r | | | j | 0l j | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |