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suppliers of 74ACTQ24O and PDF data of 74ACTQ24O

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
74ACTQ24O	NS	1000	SOP			E-TOP International（HK）Holding.. Contact:Wendy Tel:00852-39706117 Fax:00852-27592926 Email: bella@ehk-ic.com
74ACTQ24O	NS	N/A	9+	New & original, stoc	33	TONGGUANG (H.K.) Electrics Co... Contact:JAMES Tel:86-755-83996795 Fax:86-755-83996795 Email: tongguangic@gmail.com
74ACTQ24O	NS	SOP	N/A	库存特价	30000	Shen Zhen JinShengDa Electroni.. Contact:Ruixinmslong Tel:86-755-61333812 Fax:0755-61333820 Email: lulu.889@163.com
74ACTQ24O	NS	SOP		new and original	33	QINYUAN ELECTRONICS (HK) LIMIT.. Contact:Steven Wang Tel:86-755-83987685 Fax:86-755-82814283 Email: sales@xy-ic.com wxic@xy-ic.com
74ACTQ24O	NS		SOP			DHK INTERNATIONAL (HK) CO . ,.. Contact:Han Tel:+852 6081 9241 Fax:+852 6631 2078 Email: tina@dhk-int.com.hk
74ACTQ24O	SOP		NS			Hongkong One-tech electronic C.. Contact:Anny Guo Tel:86-755-61303996 Fax:86-755-83014330 Email: guo338988@163.com

74ACTQ24O Datasheet

7YPE NUMBER	SYMBOLS	RB 151G	RB 152G	RB 153G	RB 154G	RB 155G	RB 156G	RB 157G	UNffS
Maximum Recurrent Peak Reverse Vottage	VRRM	50	100	200	400	6	800	1000	V
Maximum RMS Bridge Input Voltage	VRMS	35	70	140	280	420	560	700	V
Maximum D.C Blocking Voltage	VDC	50	100	200	400	6	800	1000	V
Maximum Average Forward Rectified Current @ TA = 50'c	IF(AV)	1.5							A
Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load(JEDEC method)	IFSM	50							A
Maximum Forward Voltage Drop per element @ 1.OA	VF	1.10							V
Maximum Reverse Current at Rated @ TA =251::' D.C. Blocking Voltage per element @ TA = 125'C	IR	10 5							tiA
Operating Temperature Range	TJ	- 55 to +150
Storage Temperature Range	TSTG	- 55 to +150							J

74ACTQ24O Price

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
ICES,ICBO ICES ICEO IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat	Collector cut-off current 1 Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain	VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 0C VCEO = VCEOMmax(500V) VEB = 9 V; lc = 0 A lB = 0 A; lc = 100 mA; L = 25 mH lc = 3 A; lB = 0.6 A lc = 3 A; lB = 0.6 A lc = 5 mA; VCE = 5 V lc = 500 mA; VCE = 5 V lc = 2.5 A; VCE = 5 V lc = 3 A; VCE = 5 V	500 1 0 14 1 0	0.25 0.97 22 25 13.5 12	1.0 2.0 0.1 0.1 1.5 1.3 35 35 17	mA mA mA mA V V V

74ACTQ24O on stock

INPUTS				OUTPUTS
AO-A7	BO-B7	SELECT A/B	LE	QO-Q7
A data	B data	L	1	B data
A data	B data	H	1	B data
x	x	x	L	Z
x	x	L	H	B latched data
x	x	H	H	A latched data

j				VCE=2V le = 10 mA
--__ -	SG- -	+M	G
	~		G


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BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT BUILT-IN ERASE: A previously erased page within main memory can be programmed with the contents of the buffer. An 8-bit opcode of 88H is followed by the six reserved bits, nine address bits (PA8- PAO) that specify the page in the main memory to be written, and nine additional don't care bits. When a low-to- high transition occurs on the CS pin, the part will program the data stored in the buffer into the specified page in the main memory. It is necessary that the page in main memory that is being programmed has been previously erased. The programming of the page is internally self- timed and should take place in a maximum time of tp. During this time, the status register will indicate that the part is busy.

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