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74LVCH1645 Datasheet

Storage Temperature . . . . . . Maximum Case Temperature . . . . . . . . Maximum DCVoltage '''''' Maximum Continuous RF Input Power . . . . . . . . . . . Maximum Short Term Input Power (1 Minute Max.) . Maximum Peak Power (3 psec Max.) . . . . . . . . . . . . . Burn-in Temperature (AC558/AC559) . . . . . . . . . . . . Thermal Resistance' (Ojc; AC558) . . . . Thermal Resistance' (Ojc; AC559) . . . . Junction Temperature Rise Above Case (Tjc; AC558) Junction Temperature Rise Above Case (Tjc; AC559) 1 Thermal resistance is based on total power dissipation.
74LVCH1645 Price

AO to A13	Addrass input
WE	ReadWrile control input
OE	Outpui enable input
CE	Chip enable input
rtoi t0 1/08	Data inpuvouput
VCC, GND	Power supply pins

74LVCH1645 on stock

	IIIIII rriq In = 1 mA, Vr;q = 0 V
	90s @ VDS = 10 V, VGS = 0 V - f=l kHz
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This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy effiaent design also otfers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well surted for bridge arcuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

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