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88E1111-B2-BAB1I000 Datasheet

Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 LiA. IB = 0 120 V
Emitter-base voltage (Collector open) VEBO IE = 10 yA,Ic = 0 5 V
Forward current transfer ratio vl hFEr2 VCE = 10 V,IC = 150 mA 130 330
hFE2 VCE = 5 V,IC = 500 mA 50
Collector-emitter saturation voltage 'kl VCE(sat) Ic = 500 mA, IB = 50 mA 0 2 0 6 V
Base-emitter saturation voltage *i VBE(sat) Ic = 500 mA, IB = 50 mA 0.85 1.20 V
Transition frequency fr VCB = 10 V,IE = -50 mA, f = 200 MHz 120 MHz
Collector output capacitance (Common base, input open circuited) Cob VCB = 10 V,IE = O, f= 1 MHz 20 pF


88E1111-B2-BAB1I000 Price

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88E1111-B2-BAB1I000 on stock
Notes: (1) Low duty cycle pulse testing with Kelvin connections required. (2) Dropout voltage is defined as the input to output differential at which the output voltage drops l% below the value measured with a 2V differential. (3) Bandwidth of 10 Hz t0 10 kHz.

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The RFM15N05L and RFM15N06L and the RFP15N05L and RFP15N06L' are N-channel enhancement-mode slllcon-gate power field-effect translstors deslgned for apphcations such as switchlng regulators, switching converters, motor drIvers, relay drlwrs, and drlwrs for hlgh-power blpolar switching translstors requlrlng high speed and low gate-drive power. These types can be operated dIrectly from Integrated circuIts.