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99Y27 Datasheet

Out-of-Phase Controllers Reduce Required Input Capacitance and Power Supply Induced Noise OPTI.LOOPTM Compensation Minimizes COUT Dual N-Channel MOSFET Synchronous Drive +1% Output Voltage Accuracy Power Good Output Voltage Monitor (LTC1628-PG) DC Programmed Fixed Frequency 150kHz t0 300kHz Wide VIN Range: 3.5V t0 36V Operation Very Low Dropout Operation: 99% Duty Cycle Adjustable Soft-Start Current Ramping Foldback Output Current Limiting Latched Short-Circuit Shutdown with Defeat Option Output Overvoltage Protection Remote Output Voltage Sense Low Shutdown 10: 20ccA 5V and 3.3V Standby Regulators Small 28-Lead SSOP Package Selectable Constant Frequency or Burst Mode" Operation
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Part No.	Max Freq. (Speed)
M390S2858CTl-C7C	133MHz(7.5ns @ CL=2)
M390S2858CTl-C7A	133MHz (7.5ns @ CL=3)

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The BS616UV4010 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of l.8V t0 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.20uA and maximum access time of 70/100ns in 2.OV operation. Easy _memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output d rivers. The BS616UV4010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV4010 is available in DICE form, JEDEC standard 44-pin TSOP Type 2 package and 48-pin BGA package.

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Parameter	Symbol	Conditions	mi¨n	typ	max	Unit
	ICBO	VCB = -10V,IE = 0			100	nA
Collector cutoff current	ICEO	VCE = -10V,IB = 0			1	LLA
Collector to base voltage	VCBO	Ic = -10UA,IE = 0	80			v
Collector to emitter voltage	VCEO	Ic = -2mA,IB = 0	-80			v
Emitter to base voltage	VEBO	IE = -lOhiA, Ic = 0	5			v
Forward current transfer ratio	hFE4	VCB = -5V,IE = -2mA	180		700
ColIector to emitter saturation voltage	VCE(saL)	Ic = -20mA,IB = -2mA			0 6	v
Base to emitter voltage	VBE	VCE = -1V,IC = -lOOmA		-1	1.2	v
Transition frequency	fr	VCB = -5V, IE = 2mA, f = 200MHz		150		MHz

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