A1117N-1.8 Datasheet| l l l iV/A\ r Tc 2 25'C F J 7 f }Z3 J f / 7 7 J 2 H Il(L ¨ I '.\ 3V -_ f --_ -2 |
A1117N-1.8 on stock| CHARACTERISTIC | SYMBOL | TEST CONDITION | MIN | TYP | MAX | UNIT | | Collector Cut-off Current | ICBO | VCB = 50V, IE =O | | | 0.1 | pA | | Emitter Cut-off Current | IEBO | VEB = 5V, IC =O | | | O1 | pA | | DC Current Gain | hFE (Note) | VCE = 6V, IC = 2mA | 600 | | 3600 | | | Collector-Emitter Saturation Voltage | VCE (sat) | IC =100mA, IB =10mA | | 0.12 | 0.25 | V | | Transition Frequency | fT | VCE = 10V, IC =10mA | 100 | 250 | | MHz | | Collector Output Capacitance | Cob | VCB=10V,IE=O, f=lMHz | | 3.5 | | pF | | Noise Figure | NF (1) | VCE = 6V, IC = O.lmA, f= 100Hz, RG =10kfl | | 0.5 | | dB | | NF (2) | VCE = 6V, IC = O.lmA, f=lkHz, RG =10kfl | | O3 | | dB | | | | | | | |
Features . Common-emitter 7 channels. LB1211,1212,1213,1214 . Common-collector 7 channels. LB1215,1216 . Independent 5 channels LB1217 . Built-in base current limiting resistors. LB1212,1213,1214,1216 . Built-in Zener diodes for level shift. LB1212 . Capable ofbeing direct driven with TTL, CMOS, PMOS, etc. . Wide operating voltage and temperature ranges | | | | | | | | | | | | | RDS(ON) @ 10\ | 4A | | | | I | | | | | | | | | | | | | j | | | | | | | | j | | | | | | | | | rj | | | | | | | | | | j | | | | | r | | VGS(th) @ 10mA | j | | | | | | | | | | jj | | | | | | | | | | | | | | | | | |
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