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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
A2V64S40DTP-6 MIT         
A2V64S40DTP-6 03+        20000 
    E-TOP International(HK)Holding..
  • Contact:Wendy
  • Tel:00852-39706117
  • Fax:00852-27592926
  • Email: bella@ehk-ic.com


A2V64S40DTP-6   TSOP  08+  First-level agent, s  4600 
A2V64S40DTP-6 AMUC  SOP  06+  new and original  1000 


A2V64S40DTP-6 AMUC  SOP  05+  new and original  1000 
    QY Electronics (HK) Co., Limi..
  • Contact:Chen
  • Tel:86-755-61249260
  • Fax:86-755-61249261
  • Email: hkqydz@gmail.com
A2V64S40DTP-6 03+        20000 
    DHK INTERNATIONAL (HK) CO . ,..
  • Contact:Han
  • Tel:+852 6081 9241
  • Fax:+852 6631 2078
  • Email: tina@dhk-int.com.hk


A2V64S40DTP-6 03+        20000 
    ShenZhenHYCElectronicTechnolog..
  • Contact:Mr.lodgeliu/Catherine JI
  • Tel:86-755-82956158 82958019 82958079
  • Fax:86-755-82956157
  • Email: catherine@hengyic.com
A2V64S40DTP-6 MIT    07+  newandoriginalinours  20500 
    shenzhenjinxinyico,.ld
  • Contact:Ms.IvyLiu
  • Tel:86-755-83229700
  • Fax:86-755-83349417
  • Email: jxy1818@yahoo.com.cn
A2V64S40DTP-6         2238 
    FUTURETECHCOMPONENTSLIMITED
  • Contact:Ms.LindaChen
  • Tel:86-755-83047613
  • Fax:86-755-82814007
  • Email: futuretech@fcl-ic.com
A2V64S40DTP-6 MIT    03+    10000 
    EdianElectronicsCompany
  • Contact:Ms.cheungtrammy
  • Tel:86-755-22200057
  • Fax:--
  • Email: edianelec@gmail.com

A2V64S40DTP-6 Datasheet
Notes: 1. The Input Timing Reference is 0.8V for VIL and 2.OV for VIH. 2. tOE and tDFP are characteristics of the device but must be accommodated by the programmer
A2V64S40DTP-6 Price

ESD STANDARD CONDITIONS
IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883, class 3 >4 kV


A2V64S40DTP-6 on stock
I Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

Parameter Max Units
ID@Tc= 25C Continuous Drain Current, VGS @ 10V 59 A
ID @ Tc = 1000C Continuous Drain Current, VGS @ 10V 41
IDM Pulsed Drain Current 0 230
PD @Tc= 25C Power Dissipation 130 W
Linear Derating Factor O89 W/oC
VGS Gate-to-Source Voltage ±10 V
EAS Single Pulse Avalanche Energy~ 320 mJ
IAR Avalanche Current01 35 A
EAR Repetitive Avalanche Energy0 13 mJ
dv/dt Peak Diode Recovery dv/dt 2 2 V/ns
IG VGS Clamp Current ±50 mA
VESD Electrostatic Votage Rating ±2 0 kV
Tj TSTG Operating Junction and Storage Temperature Range -55 to+ 175 oc oC
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 0r M3 srew 10 lbf-in (1.1N-m)


TJ=-400C
25 0C
1250C __
hFE4
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