| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| ABLS-20.000MHZ-B2-T | ABRACON | 09+ | 46000 |
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| ABLS-20.000MHZ-B2-T | Abracon | CRYSTAL 20 | Skype:gtuitgah@163.com | Stock | 12500 |
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| ABLS-20.000MHZ-B2-T | 07+ |
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| ABLS-20.000MHZ-B2-T | ABR | ０８+ | 3000 |
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| ABLS-20.000MHZ-B2-T | ABRACON | HC-49US | 08+ |
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| ABLS-20.000MHZ-B2-T | ABR | ０８+ | new and original | 3000 |
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ABLS-20.000MHZ-B2-T Datasheet fi = input frequency in MHz CL = output load capacitance in pF fo = output frequency in MHz VCC = supply voltage in V E (CL x VCC2 x fo) = sum of outputs 2. For HC the condition is VI = GND to vcc For HCT the condition is VI = GND to VCC - 1.5 V ABLS-20.000MHZ-B2-T Price
External high-speed output-clamp diodes should be used for inductive transient suppression. To minimize device power dissipation, a VCCl supply voltage, separate from VCC2, is provided for the logic inputs. The TPIC0298 is designed for operation from OIC t0 70IC. This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 0r -6), package type (SOJ or TSOP- II) are optional features of this family. All of this family have ~AS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power con- sumption and high reliability. |
