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suppliers of ATR0839 and PDF data of ATR0839

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
ATR0839 ATMEL    05+    431 
    Beld electronic technology ltd..
  • Contact:WENDY
  • Tel:86-755-82814318
  • Fax:
  • Email: seller_1@beldhk.com


ATR0839 ATMEL  QFN28  06/07+  HOT OFFER  400 
    XIA SONG ELECTRONICS CO.,LTD
  • Contact:helen chen
  • Tel:86-755-25801614
  • Fax:86-755-25801614
  • Email: xiasongdz3@163.com


ATR0839 ATMEL    837    05+ 
    Elite(HK)Electronic Trade Limi..
  • Contact:sunshine
  • Tel:86-755-61305888
  • Fax:86-755-61305855
  • Email: sales008@elite-ic.com
ATR0839 Atmel  QFN32  08+  new and original wit  10000 
    HK PUSHI ELECTRONIC INDUSTRY L..
  • Contact:Xiao
  • Tel:86-755-83858006
  • Fax:86-755-83298677
  • Email: annie@pushi-ic.com
ATR0839 ATMEL  QFN20  08+  全新热卖.特价销售  4320 
    ShenZhen Cheng Dao Technology ..
  • Contact:Mr. Friday
  • Tel:86-755-84741486
  • Fax:86-755-82866140
  • Email: 915063567@qq.com


ATR0839 408    ATMEL    QFN20 
    ANDE ELECTRONICS CO.,LIMITED
  • Contact:mr
  • Tel:86-755-83690192
  • Fax:86-755-82736311
  • Email: ande@andesource.com

ATR0839 Datasheet
This T-1 3/4 super bright LED has a narrow viewing angle of 12 for concentrated light output. The MV831X series is made with an AllnGaP LED that emits yellow light at 590 nm. It is encapsulated in a water clear epoxy lens package.
ATR0839 on stock

Input Pulse Levels VCC x 0.1 to VCC x 0.9
Input Rise and Fall Times 5ns
Input and Output Timing Levels VCC X 0.5


VDD:3V,VREF:1V,inputCode:4095


1 The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to become sufficiently positive for active clamping. Refer to INPUT CHARACTERISTICS. 2 While the protection supply voltage is connected, during overvoltage clamping it is possible that the overload protection may operate at energies close to the limiting value. Refer to OVERLOAD PROTECTION CHARACTERISTICS. 3 Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source voltage becoming positive.