| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
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BCX56-16 T-R Datasheet FUNCTIONAL DESCRIPTION . " ... ...... . 8 Figure 4. Functional Block Diagram . ' ' . . . . . . . . . . 8 Table 2. Main Operating Modes . . . . . . . . . . . . . . . 9 BCX56-16 T-R Price
BCX56-16 T-R on stock The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte/word or consecutive bytes/words up t0 528(X8 device) or 264(X16 device), in a single page program cycle. The number of consecutive partial page program- ming operation within the same page without an intervening erase operation should not exceed 2 for main array and 3 for spare array. The addressing may be done in any random order in a block. A page program cycle consists of a serial data loading period in which up t0 528 bytes(X8 device) or 264 words(X16 device) of data may be loaded into the page register, followed by a non-volatile pro- gramming period where the loaded data is programmed into the appropriate cell. About the pointer operation, please refer to the attached technical notes. The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the three cycle address input and then serial data loading. The words other than those to be programmed do not need to be loaded.The Page Program confirm com- mand(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the pro- gramming process. The internal write controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(l/0 6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(l/0 0) may be checked(Figure 10). The internal write verify detects only errors for "1"s that are not successfully programmed to "O"s. The command register remains in Read Status command mode until another valid command is written to the command register. NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address. 2. A write occurs during the overlap of a low CS, WE, LB and UB. A write begins at the latest transition CS going low and WE going low; A write ends at the earliest transition CS going high or WE going high. tWP iS measured from the beginning of write to the end of write. 3. tcw is measured from the later of CS going low to end of write. 4. tAS iS measured from the address valid to the beginning of write. 5. tWR iS measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high. 6. If OE, CS and WE are in the Read Mode during this period, the l/0 pins are in the output low-Z state. Inputs of opposite phase of the output must not be applied because bus contention can occur. 7. For common l/0 applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. 8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state. 9. Dout is the read data of the new address. 10. When CS is low: l/0 pins are in the output state. The input signals in the opposite phase leading to the output should not be applied. |
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