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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
CM05X5R473K10AN	KYOCERA		07+		120000	HuiYuan Electronic (Asia)Limit.. Contact:chen Tel:86-755-23956858 Fax:86-755-23956577 Email: chen@huiyuan-elelc.com

CM05X5R473K10AN Datasheet

RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s)
CM05X5R473K10AN on stock

S Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with one screw

RATING	SYMBOL	RBV 1000	RBV 1001	RBV 1002	RBV 1004	RBV 1006	RBV 1008	RBV 1010	UNIT
Maximum Recurrent Peak Reverse Voltage	VRRM	50	100	200	400	600	800	1000	Volts
Maximum RMS Voltage	VRMS	35	70	140	280	420	560	700	Volts
Maximum DC Blocking Voltage	VDC	50	100	200	400	600	800	1000	Volts
Maximum Average Forward Current Tc = 550C	I F(AV)	10							Amps.
Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method)	IFSM	300							Amps.
Current Squared Time at t < 8.3 ms.	12t	160							A'S
Maximum Forward Voltage per Diode at IF = 5.0 Amps.	VF	1.0							Volts
Maximum DC Reverse Current Ta = 25 0C	IR	10							UA
at Rated DC Blocking Voltage Ta = 100 0C	IR(H)	200							LLA
Typical Thermal Resistance (Note l)	ROJC	2.5							oC/w
Operating Junction Temperature Range	TJ	- 40t0 +150							c
Storage Temperature Range	TSTG	- 40 to +150							oC

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