EKMR351VSN391MP50S Price These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages. EKMR351VSN391MP50S on stock| SYMBOL | PARAMETER | CONDITIONS | NOTES | TA = 25IC MIN TYP MAX | SUB- GROUP | -55IC " TA " 125IC MIN TYP MAX | SUB- GROUP | UNITS | | VOUT | Output Voltage | RH1021CM-10 RH1021BM-10, DM-10 | 1 1 | 9.995 10.005 9.95 10.05 | 1 1 | | | V V | | TCVOUT | Output Voltage Temperature Coefficient | RH1021BM-10 RH1021CM-10, DM-10 | 2 2 | | | 5 20 | 2,3 2,3 | ppm/rC ppm/rC | | q:VOUT qjVIN | Line Regulation | 11.5V " VIN " 14.5V 14.5V " VIN " 40V | 3 3 | 4 2 | 1 1 | 6 4 | 2,3 2,3 | ppmN ppmN | | qjVOUT ClOUT | Load Regulation (Sourcing Current) | 0 " IOUT " lOmA | 3 | 25 | 1 | 40 | 2,3 | ppm/mA | | Load Regulation (Shunt Mode) | 1.7rriA " IOUT " lOrriA | 3,4 | 100 | 1 | 150 | 2,3 | ppm/mA | | Is | Supply Current (Series Mode) | | | 1.7 | 1 | 2.0 | 2,3 | mA | | IMIN | Minimum Current (Shunt Mode) | VIN Is Open | | 1.5 | 1 | 1.7 | 2,3 | mA | | | Output Voltage Noise | O.lHz " f " 10Hz 10Hz " f " lkHz | 5 5 | 6 6 | 4 | | | PP ccVRMS | | | Long-Term Stability of VOUT | = 1000 Hrs Noncumulative | 6 | 15 | | | | ppm | | | Temperature Hysteresis of VOUT | 25r= +25IC | | 5 | | | | ppm | | | | | | | | | |
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit | | ICEO | Collector Cut-off Current (lB = 0) | VCE = 300 V VCE = 300 V Tj = 125 0C | | | 1 00 0.5 | CA mA | | IEBO | Emitter Cut-off Current | VEB=5 V | | | 20 | mA | | VCL* | Clamping Voltage | lc=100 mA | 350 | | 500 | V | | VCE(sat)* | Collector-Emitter Saturation Voltage | lc = 8 A lB = 100 mA lc = 10 A lB = 250 mA lc = 12 A lB = 300 mA | | | 1.8 1.8 2 | V V V | | VBE(sat)* | Base-Emitter Saturation Voltage | lc = 8 A lB = 100 mA lc = 10 A lB = 250 mA lc = 12 A lB = 300 mA | | | 2.2 2.5 2.7 | V V V | | hFE* | DC Current Gain | lc = 5A VCE = 10 V | 300 | | | | | VF | Diode Forward Voltage | IF=10 A | | | 2.5 | V | | | Functional Test (see fig. 1) | Vcc = 24 V 1= 7 mH | 10 | | | A | | ts tf | INDUCTIVE LOAD Storage Time Fall Time (see fig. 3) | Vcc = 12 V 1= 7 mH VBE = 0 RBE = 47 Vclamp = 300 V lc = 7 A lB = 70 mA | | 1 5 0.5 | | ccS CS | | | | | | | |
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