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HS-1100RH Datasheet

SPECNFNCATIONS (Tj = 250C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 UA 60 V
Gate Threshold Voltage VGS(th) VDS = VGS,ID = 250 yA 1 0 2 0 3 0
Gate-Body Leakage IGSS VDS = 0 V, VGS =20 V 100 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, Tj = 1250C 50 yA
VDS = 60 V, VGS = 0 V, Tj = 1750C 150
On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10V 20 A
VGS = 10 V, ID = 20A 0 022 Q
VGS = 10 V, ID = 20 A, Tj = 1250C 0 043
Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 20 A, Tj = 1750C 0 053
VGS = 4.5 V, ID = 20 A 0 025
Forward Transconductanceb 9fs VDS = 15 V, ID = 20 A s
Dynamic
Input Capacitance ciss 1800 pF
Output Capacitance coss VGS = 0 V, VDS = 25 V, f= 1 MHz 350
Reverse Transfer Capacitance Crss 100
Total Gate Chargec Qg 40 60
Gate-Source Chargec Clgs VDS=30V, VGS=10V,ID=40A 9 nC
Gate-Drain Chargec Qgd 10
Turn-On Delay Timec td(on) 10 20
Rise Timec tr VDD = 30 V, RL = 0.9 Q 9 20 ns
Turn-Off Delay Timec td(off) ID 20 A, VGEN = 10 V, RG = 2.5 Q 28 50
Fall Timec tf 7 15
Source-Drain Diode Ratings and Characteristics (Tc = 250C)
Pulsed Current ISM 20 A
Diode Forward Voltage VSD IF = 20 A, VGS = OV 1 0 1 5 V
Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/ys 48 100 ns


HS-1100RH Price
Temperature Alarm Output (.12) An over-temperature alarm output is provided at header J2. This open collector output is designed to drive an LED. Rns J2:+ and J2:C are internally connected to the power supply (P+) and a transis- tor's collector, respectively. When the alarm is closed, Pin C is at circuit ground (P-).
HS-1100RH on stock

ltem Symbol Condition Min Typ Max Unit Remarks
Input pin capacitance CIN VDD = Vi = OV, f=lMHz 9 pF
Output pin capacitance COUT VDD = Vi = OV, f=lMHz 1 1 pF
Input/output pin capacitance Ciio VDD = Vi = OV, f=lMHz 1 1 pF


TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.