LF444M Datasheet| SYMBOL CHARACTERISTIC MIN. TYP. ' MAX. UNIT TEST CONDITIONS | | hFEl DC Current Gain 135 ' 250 600 - VCE=-2.0 V,IC=-100 mA hFE2 DC Current Gain 40 - VCE=-1.0 V.IC=-l.0 A fT Gain'Bandwidth Product 50 80 MHz VCE=-2.0 V.IE=lOmA Cob OutputCapacitance 23 50 pF VCB=-10 V.IE=O,f=l_0 MHz ICBO Collector Cutoff Current -100 . nA VCB=-50 V,IE=O IEBO Emitter Cutoff Current -100 nA . VEB=-6.0 V,IC=O VBE Base to Emitter Voltage -0.55 -0.60 -0.65 V VCE--6.0 V,IC=-50 mA VCE (sat) Collector Saturation Voltage -0.3 5 -0.60 V lC = -1 .0 A. lB =-50 mA VBE(sat) BaseSaiuration Voltage -0.94 -1.20 V IC=-1.0 A.IB=-50 mA |
LF444M on stock| Collector - Emitter S~staining Voltage ( lc = 100 mA, lB = O, L=25 mH, Vciamp=Rate VCEO ) | VCEO(SUS) | 375 | | V | | Collector Cutoff Current ( VCE= Rated VCES' Rr*E=O ) ( VCE= Rated VCES, RBE=O,Tj=1250C) | ICES | | 1.0 2O | mA | | Emitter Cutoff Current ( VEB = 8.0 V , lc = 0) | IEBO | | 150 | mA | | | | | |
. FEATURES . Single-Power-Supply . Wicle Operaiing Voliage . Low Operating Current . Wicle Common Mocle Inpm Voltage . High Inpui Impedance . Low Bias Currejit . Low Offset VoILage . C-MOS (Push-Pull) Output . Package OLitline
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