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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
M8340102M1801GB	.	.	.		20	ALLSKY(HONGKONG)ELECTRONICSCO. Contact:Jenny Jiang Tel:86-755-83014004 Fax:86-755-83014044 Email: info@allskyhk.com
M8340102M1801GB	.	.	.		20	Liverpool (Hong Kong) Electron.. Contact:Jessica Tel:86-755-83957717 Fax: Email: info@lvphk.com
M8340102M1801GB			RESISTOR		2500	DongGuan JunSheng Electronic T.. Contact:Mary Tel:86-769-86250161 Fax:86-769-86250161 Email: junshengic@gmail.com

M8340102M1801GB Datasheet

Characterishc	Symbol	Max	Unit
IThermat Resistance Junction to Case	Rejc	3.125	oCIW

M8340102M1801GB Price

	At Any Rated Load Condition -And With Rafed VRRM Applied
	Folowing Surge

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M8340102M1801GB on stock

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		(-)15	V
Collector-to-Emitter Voltage	VCEO		(-12)15	V
Emitter-to-Base Voltage	VEBO		(-)5	V
Collector Current	IC		(-)3	A
Collector Current (Pulse)	ICP		(-)5	A
Base Current	lB		(-)600	mA
Collector Dissipation	Pc	Mounted on a ceramic board (600mm2! 0.8mm)	0 9	W
Junction Temperature	Tj		150	lc
Storage Temperature	Tstg		-55 to +150	]_C

Characteristics Symbol	Test Conditions	Min	Typ	Max	Units
Input Capacitance Cies				39	nf
Output Capacitance Coes	VCE = 10V, VGE = OV			1.7	nf
Reverse Transfer Capacitance Cres	VCE = 10V, VGE = OV			1	nf
Inductive Turn-on Delay Time td(on)	Vcc = 600V, lc = 100A,			100	ns
Load Rise Time tr	VGEl = VGE2 = 15V,			50	ns
Switch Turn-off Delay Time td(off)	RG= 3.1fl,			400	ns
Times Fall Time tf	Inductive Load			300	ns
Diode Reverse Recovery Time" trr	Switching Operation			150	ns
Diode Reverse Recovery Charge" Qrr	IE= 100A		4.1		o:c
Thermal and Mechanical Characteristics, Tj = 25	IC unless otherwise specified
Characteristics Symbol	Test Conditions	Min	Tvp	Max	Units
Thermal Resistance, Junction to Case RthO_c)Q Per	IGBT l/2 Module, Te Reference Point per Outline Drawing			O25	IC/W
Thermal Resistance, Junction to Case Rth(j_c)D Per	FWDi l/2 Module, Te Reference Point per Outline Drawing			O35	IC/W
Thermal Resistance, Junction to Case RthO_c)'Q T	Per IGBT l/2 Module, c Reference Point Under Chip		O15		Yc/w