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MAX6441KAKRWD3-T Datasheet
There is a possibility of damaging the IC when VPOWER- Vour is greater than 6V if a short circuit occurs. Short cir- cuit conditions will result in the immediate operation of the pass transistor outside of its safe operating area. Over- voltage stresses will then cause destruction of the pass transistor before overcurrent or thermal shutdown circuit- ry can become active. Additional circuitry may be required tg clamp the VPOWER to Vour differential to less than 6V if fail safe operation is required. One possible clamp circuit is illustrated in Figure 2; however, the design of clamp cir- cuitry must be done on an application by application basis. Careymust be taken to ensure the clamp actually protects the design. Components used in the clamp design must be able to withstand the short circuit condition indefinitely while protecting the IC.
MAX6441KAKRWD3-T Price

Symbol Ratings Maximum Value Unit
Vdd Supply voltage -0.3 t0 7 V
Vin Input voltage on any control pin (FS, PD, ST) -0.3 to Vdd +0.3 V
APOW Acceleration (Any axis, Powered, Vdd=3.3V) 3000g for 0.5 ms
10000g for O.l ms
AUNP Acceleration (Any axis, Unpowered) 3000g for 0.5 ms
10000g for O.l ms
TOP Operating Temperature Range -40 to +85 oc
TSTG Storage Temperature Range -40 to +105 oc
ESD Electrostatic discharge protection 2KV HBM


MAX6441KAKRWD3-T on stock

IDSS Saturated Drain-Source Current LP1500-SOT223-1 BLUE VDS = 2V VGS = OV LP1500-SOT223-2 GREEN LP1500-SOT223-3 RED 375 451 527 420 490 560 450 526 600 mA
PldB Output Power at ldB Gain Compression VDS = 3.3V, IDS = 33% IDSS f = 1800 Mhz 25.0 27.0 dBm
GldB Power Gain at ldB Gain Compression VDS = 3.3V, IDS = 33% IDSS f = 1800 MHz 13.5 15.0 dB
NF Noise Figure VDS = 3.3V, IDS = 33% IDSS, f = 1.8 GHz 1.0 dB
IP3 Output Intercept Point VDS = 3.3V, IDS = 33% IDSS, f = 1.8 GHz 42 dBm
lMAX Maximum Drain-Source Current VDS = 2V VGS = +1V 925 mA
GM Transconductance VDS = 2V VGS = OV 300 400 mS
VP Pinch-Off Voltage VDS = 2V IDS = 5mA -0.25 1.2 -2.0 V
IGSO Gate-Source Leakage Current VGS = -3V 1 0 75 [A
BVGS Gate-Source Breakdown Voltage IGS = 8mA 8 -10 V
BVGD Gate-Drain Breakdown Voltage IGD = 8mA 8 1 1 V


. 1250C Tj operation (VR < 5V) . Center tap module . Optimized for OR-ing applications . Ultra low forward voltage drop ' High frequency operation Guard ring for enhanced ruggedness and long term relia bility ' High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance . New fuHy transfer-mold low profile, small footprint, high current package