. Voltage Supply - 1.70~1.95V . Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit . Automatic Program and Erase - Page Program : (512 +16)Byte - Block Erase : (8K + 256)Byte . 528-Byte Page Read Operation - Random Access : 10Us(Max.) - Serial Page Access - 50ns . Fast Write Cycle Time - Program Time : 200Fis(Typ.) - Block Erase Time : 2ms(Typ.)
MBM29LV200BC90PFTN-SFKE1 Price| CURREHTWAVEFORM:S~HUSOIDAL | | | |
| -LOAO:RESISTIVEORINOUCTIVE CONOUCTIOFJANGLE:360 | | | |
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| O} Ol~l 0'800\I\J3600 MA | XINUM | | | |
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| :n.+ncii'oANGLE / | | TYPICAl | | |
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| I | | | | | |
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MBM29LV200BC90PFTN-SFKE1 on stock| l l l II | | | | | EMITTER |
| | | | | | | | VCE = -10V |
| Ta =1000C | | | | | | | |
| | - 55 | | | | | | | 1 |
| ____ | _ri | | | | | | | |
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| Parameter | Symbol | Value | Unit |
| min | typ. | max |
| Bridge resistance | RB | 4 | | 8 | kl |
| Sensitivity KPY 66 A KPY 67 A KPY 68 A KPY 69 A | S | 1.1 0.63 0.38 0.16 | 2.1 1.0 0.53 0.22 | 3.0 1.4 0.66 0.27 | mVNbar |
| Output voltage KPY 66 A KPY 67 A KPY 68 A KPY 69 A | Vfin | 150 190 310 330 | 260 300 420 440 | 370 410 530 550 | mV |
| Offset voltage P = PO | VO | - 25 | | +25 | mV |
| Linearity error (Best fit straight line) P = PO ... PN KPY 66] 69 A | FL | | ±0.3 | ±0.5 | % Vfin |
| Pressure hysteresis P1 = PO, P2 = PN, P3 = PO KPY 66] 69 A | PH | | ±0.1 | | % Vfin |
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