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MBM29LV320TE90PBT-QE1 Datasheet

Parameter Test Conditions Min Typ. Max Unit
ELECTRICAL CHARACTERISTICS
VCEO(sus) Collector - Emitter Sustaining Voltage lc=10mA 500 V
V(BR)CBO Collector - Base Breakdown Voltage Ic =1mA 1 000
V(BR)EBO Emitter- Base Breakdown Voltage IE =1mA 1 0
VCB=1000V 1 0
ICBO Collector - Base Cut-Off Current Tc=1250C 1 00
ICEO Collector - Emitter Cut-Off Current lB = 0 VCE = 500V 1 00
VEB=9V 1 0
IEBO Emitter Cut-Off Current IC =0 Tc=1250C 1 00
lc = O.1A VCE = 5V 1 8 30
lc = 1A VCE = 5V 1 2 1 5
hFE. DC Current Gain IC = 2.5A VCE = 1V 5 9
Tc=1250C
lc = 100mA lB = 20mA 0.05 0.1 V
VCE(sat)* Collector - Emitter Saturation Voltage IC = 1A lB = 0.5A O1 0.2
lc = 2.5A lB = 0.5A 0.3 0.8
lc = 1A lB = 0.2A 0.8 1.0 V
VBE(sat)* Base - Emitter Saturation Voltage IC = 2.5A lB = 0.5A O9 1.2
DYNAMIC CHARACTERISTICS
ft Transition Frequency lc = 0.2A VCE = 4V 20 MHz
Cob Output Capacitance VCB = 20V f=lMHz 45 pF


MBM29LV320TE90PBT-QE1 Price
Application Information The CHP0230-PM is a two-stage amplifier that requires a single regulated positive supply along with the unregulated bat- tery voltage for proper operation. Vrefis a regulated 2.95 refer- ence voltage for the bias control circuitry. It can also be used as a power down mode select. Vcc is an unregulated supply volt- age directly from the battery. Vcc should be applied prior to Vref and before RF input power. The CHP0230-PM can be operated over a range of supply voltages and bias points by adj ustment of Vref. It is important that the maximum power dissipation of the package be observed at all times and that the maximum voltage across the device is not exceeded.
MBM29LV320TE90PBT-QE1 on stock

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DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.