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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
MBM29LV651UE-12PFTN		550	FUJ	stock	TSOP	Aixin-Electronic (HK)Co.,Limit.. Contact:Sell Tel:86-755-83223158 Fax: Email: aixin-seller@hotmail.com
MBM29LV651UE-12PFTN	FUJITSU	NEW AND OR	04+		TSOP	AFG(HK)ELECTRONICES CO.,LTD Contact:zhang Tel:86-10-62988121 Fax:86-010-82624160 Email: fly@afg.hk
MBM29LV651UE-12PFTN	FUJIS					New Star Advance Co. Contact:Micahel Tel:86-755-83216997 Fax: Email: nsadvance1@gmail.com
MBM29LV651UE-12PFTN	FUJITSU				2021	Shen Zhen FULEYA Technology CO.. Contact:Angel Tel:86-0755-82730755 Fax: Email: angelchaohui@163.com
MBM29LV651UE-12PFTN	FUJITSU				2021	HY (HK) IC Limited Contact:Melody Tel:86-755-82535765 Fax:86-755-82535755 Email: melody_ic@tom.com
MBM29LV651UE-12PFTN	FUJITSU		2005+		7500	Free Components co ltd Contact:Yukki Tel:86-755-25327009 Fax: Email: assist@freeicforum.com
MBM29LV651UE-12PFTN	FUJ		09+		TSOP	aoxiang electronic Contact:john Tel:86-10-82890624 Fax: Email: vivian@afg.hk
MBM29LV651UE-12PFTN	03+		TSOP		20000	E-TOP International（HK）Holding.. Contact:Wendy Tel:00852-39706117 Fax:00852-27592926 Email: bella@ehk-ic.com
MBM29LV651UE-12PFTN	FUJITSU		2008+	特价现货！专营内存	5152	HK FENGLIDA ELECTRONICS LTD Contact:ZHAO Tel:86-755-83235791 Fax: Email: jh13k@yahoo.com.cn
MBM29LV651UE-12PFTN	FUJ	TSOP	04+		550	SuZhou HanTai Hong Ye Technol.. Contact:ZOE Tel:86--512-68052043 Fax:0512-68052070 Email: dyy8631@ars.net.cn
MBM29LV651UE-12PFTN	FUJ		04+		550	Yuexunfa Electronic Co.,Ltd Contact:linda Tel:86-755-83778358 Fax: Email: yuexunfa06@163.com
MBM29LV651UE-12PFTN	FUJ		04+		TSOP	ASHINE TECHNOLOGY (HK) COMPANY Contact:He Tel:86 Fax: Email: 372935568@163.com
MBM29LV651UE-12PFTN	FUJ	TSOP	08/09+		550	shenzhen kehao electronic co.,.. Contact:FENG Tel:86-755-61337579 Fax:86-755-61337511` Email: xinda288@yahoo.com.cn
MBM29LV651UE-12PFTN	FUJITSU		2005+		7500	Multiwin Group Ltd Contact:Steve Tel:86-755-81943020 Fax: Email: steve@multiwingroup.com
MBM29LV651UE-12PFTN	FUJ	TSOP	06+	现货	4587	Electra Select Components Limi.. Contact:Lily Tel:86-755-33377373 Fax: Email: lily@esc-ic.com
MBM29LV651UE-12PFTN	FUJIS		04+/05+	original.new	5600	ALTA ELECTRONICS LTD Contact:Jack Tel:86-755-83040484 Fax: Email: alta_electronics@yahoo.cn
MBM29LV651UE-12PFTN	FUJITSU		2005+		7500	dfvdfv Contact:Luo Tel:86-755-81943020 Fax:86-755-8288-4115 Email:
MBM29LV651UE-12PFTN	03+		TSOP		20000	DHK INTERNATIONAL (HK) CO . ,.. Contact:Han Tel:+852 6081 9241 Fax:+852 6631 2078 Email: tina@dhk-int.com.hk
MBM29LV651UE-12PFTN	TSOP		FUJ		04+	wrightway electronics limited Contact:alex Tel:86-755-89537661 Fax: Email: info@wrightway.cn
MBM29LV651UE-12PFTN	03+		TSOP		20000	ShenZhenHYCElectronicTechnolog.. Contact:Mr.lodgeliu/Catherine JI Tel:86-755-82956158 82958019 82958079 Fax:86-755-82956157 Email: catherine@hengyic.com
MBM29LV651UE-12PFTN	FUJI		06+		2835	HKLongShengElectronicsCo.,Ltd. Contact:Mr.JasonShe Tel:86-755-83794634 Fax:86-755-83295037 Email: sales@hkls-ic.com
MBM29LV651UE-12PFTN	FUJ	TSOP			550	IC-SUNNY.CO Contact:Mr.Mr.Liu Tel:86-010-010-51669684 Fax:86-010-010-51669674 Email: kelly@ic-sunny.com

MBM29LV651UE-12PFTN Datasheet

The MAX396/MAX397 low-voltage, CMOSianalog multi- plexers (muxes) offer low on-resistance ciool max), which is matched to within 61 between switches and remains flat over the specified signal range ciol max). They also offer low leakage over temperature (input off-leakage current less than lnA at +85aC) and fast switching speeds (transi- tion time less than 250ns). The MAX396 is a 16-channel device. and the MAX397 is a dual 8-channel device.
MBM29LV651UE-12PFTN Price

S-/mbDI		Test conditions				Unit
S-/mbDI		Test conditions	Min	Typ	Max	Unit
V (BR) EBO	Emitter to base breakdown voltage	IE-lOmA. Ic=O	4			V
V(BR)CBO	Collector io base breakdown voltage	lc=lOmA. IE-O	45			V
V(BR)CEO	Colleaor to emitter breakdown voltage	lc=50mA, RBE-oo	35			v
ICBO	Colleaor cutoff current	VCB=25V. IE=O			1000	A
IEBO	EmiUer cuioff curreni	VEB=3V. lC-O			400	uA
hFE	DC farward current gain *	VCE=25V. IC=O.1A	10	40	180
Po	Output power	VCC=24V,Pin=3W.f-770MHz.	12	14		w
TlC	Collector efficiencV	ID = 50 mA**	55	60		%

MBM29LV651UE-12PFTN on stock

Collector-Emitter Voltage (VGE = OV)	VCES	4500	Volts
Gate-Emitter Voltage (VCE = OV)	VGES	+20	Volts
Collector Current (Tc = 25IC)	lc	900	Amperes
Peak Collector Current (Pulse)	ICM	1800*	Amperes
Diode Forward Current" (Tc = 25YC)	IE	900	Amperes
Diode Forward Surge Current" (Pulse)	IEM	1800*	Amperes
Maximum Collector Dissipation (Tc = 25YC, IGBT Part, Tj " 1251C)	Pc	10000	Watts
Max. Mounting Torque M8 Terminal Screws		115	in-lb
Max. Mounting Torque M6 Mounting Screws		53	in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws		17	in-lb
Module Weight (Typical)		2 2	kg
V Isolation (Charged Part to Baseplate, AC 60Hz l min.)	Viso	6000	Volts
' Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. "Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 IC unless otherwise specified
Cha racteristics Symbol Test Conditions	Min.	Tp.	Max. Units
Collector-Cutoff Current ICES VCE = VCES,VGE =	OV		18.0 mA
Gate Leakage Current IGES VGE = VGES, VCE =	OV		0.5 0A

COMPONENT	DESCRIPTION	VALUE	DIMENSIONS	CATALOGUE NO.
C1C2	multilayer ceramic chip capacitor; note 1	5.1 pF
C3C5	Tekelec variable capacitor	0.6 t0 4.5 pF
C4	Tekelec variable capacitor + multilayer ceramic chip capacitor; note 1	0.6 t0 4.5 pF+ 2.4 pF
C6C10	multilayer ceramic chip capacitor; note 2	100 pF
C7C11	multilayer ceramic chip capacitor; note 2	18 pF
C8, C12, C23, C29	tantalum SMD capacitor	4.7CF; 35 V
C9, C13, C24, C30	tantalum SMD capacitor	10 ccF; 35 V
C14	multilayer ceramic chip capacitor; note 3	0.5 pF
C15	multilayer ceramic chip capacitor; note 3	1 pF
C16	multilayer ceramic chip capacitor; note 1	1.5 pF
C17C18	multilayer ceramic chip capacitor; note 1	10 pF
C19C25	MKT ceramic chip capacitor	33 nF		2222 370 11333
C20C26	multilayer ceramic chip capacitor; note 2	6.2 pF
C21C27	multilayer ceramic chip capacitor	100 nF		2222 581 16641

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