MBM29LV800TA70PFIT Datasheet| PARAMETER | MIN | TYP | MAX | UNIT | COMMENTS | | Prescalar Input Sensitivity Upconverter: RFu (pin 16) ci) Downconverter: RFD (pin 19) c2) Upconverter: RFu (pin 16) ci) Downconverter: RFD (pin 19) c2; | -7 -13 -6 -11 | | +20 +20 | dBm | (over operating frequency) TA = +85 aC, VDD = +4.7 V TA = +85 aC, VDO = +4.7 V | | Reference Oscillator Sensitivity (pin 13) | | 0.5 | | Vp-p | | | Charge Pump Output Current {3) SINK SOURCE | | 1.25 -1.25 | | mA | | | Supply Current | | 35 | 50 | mA | | | Power Consumption | | 165 | 250 | mW | | | | | | | |
MBM29LV800TA70PFIT Price The 20079 is a class NAB, NPN, silicon bipolar junction, internally- matched, common emitter RF Power transistor intended for 26 Vdc operation across l.6 t0 1.7 GHz frequency band. It is rated at 10 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. MBM29LV800TA70PFIT on stock| | Bit7 | Bit6 | Bit5 | Bit4 | Bit3 | Bit2 | Bitl | Bit0 | | ComBuf0: | 0 | 0 | 1 | 1 | N3 | N2 | N1 | NO | | | | | | | | | |
| XA 16-bit microcontroller | | | 32K/1 K OTP/ROM/ROMless, 8-channel 8-bit A/D, low voltage (2.7 V-5.5 V), | XA-S3 | | 12C, 2 UARTs, 16 MB address range | | |
|
