| Parameter | Symbol | Values | Unit |
| Continuous drain current Tc = 36 aC | ID | 5.5 | A |
| Pulsed drain current TC = 25 aC | /Dpuls | 22 |
| Avalanche current,limited by Tjmax | /AR | 5.5 |
| Avalanche energy,periodic limited by Tjmax | EAR | 8 | mJ |
| Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V, RGS = 2s o L = 18.5 mH, Tj = 25 aC | EAS | 320 |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation Tc = 25 aC | Ptot | 75 | W |
| Operating temperature | Tj | -55+150 | aC |
| Storage temperature | Tstg | -55+150 |
| Thermal resistance, chip case | RthjC | 1.67 | K/W |
| Thermal resistance, chip to ambient | RthjA | 75 |
| DIN humidity category, DIN 40 040 | | E | |
| IEC climatic category, DIN IEC 68-1 | | 55 /15056 |
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