| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| MC6N02 | MOT | SMD-8 | 08+ | 1500 |
|
||
| MC6N02 | MOT | SMD-8 | 05+ | 3000 |
|
![]()
|
|
| MC6N02 | MOT | SMD-8 | 06+ | 1200 |
|
||
| MC6N02 | 1000 |
|
|||||
| MC6N02 | MOT | SMD-8 | 06+ | 3100 |
|
||
| MC6N02 | SMD-8 | MOT | 07+ |
|
|||
| MC6N02 | MOT | 00+ | 1500 |
|
MC6N02 Datasheet
MC6N02 Price Features . Adoption ofFBET process - High DC current gain . High VEBO (VEB0 25V) . High reverse hFE (150 typ) . Small ON resistance IRon =lfl (IB = 5mA)] . Very small-sized package permit,ting 2SC4695-applied sets to be made small and slim MC6N02 on stock WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. IFO(L) VD = 15V,VFO =15V' 10 15 mA Minimum Fault Output Pulse Width tFO VD = 15V' 1.0 1.8 - ms
|
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||