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( ) : 2SA1710 Absolu te Maximum Ratiiigs at Ta = 250C CollecLor to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitler to Base Voltage VEBO CollecLorCurrent . IC Collector Current(Pulse) ICP Collector DissipaLion Pc Junction Temperature Tj Storage Temperature Tstg Electrical Ch aracteristics at Ta = 250C Collec Lor CuLoff Curren t, ICBO VCB = ( - )200y,IE = 0 Emitter Cuto{T Current IEBO VEB = ( -)4V,Ic = 0 DC Current Gain hFE VCE = (-)10V,IC = (-)lOmA Gain-Bandwidth Product fT VCE =(-)30V,Jc = (-)10mA C-E Sat,urat,ion Voltage VCE{sat) lC = (-)20mA,IB = ( -)2mA B-E Saturation Voltage VBE{sat) lC = ( -)20mA,IB = ( -)2mA Output Capacitance cob VCB = ( -)30V,f= 1MHz Reverse Transfer Capacitance cre VCB= ( -)30V,f= 1MHz C-B Breakdown Voltage V(BR>CBO lC = ( -)10L1A,IE = o C-E Breakdown Voltage V(BR>CEO lC = ( -)lmA,RBE = co E-B Breakdo-vn Voltage V(BR)EBO IE = ( -)10pA,IC = o