| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
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N700099BFFBFCB (CS41077DWR16) Datasheet Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorad0 80217 USA Phone: 303-675-2175 0r 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 0r 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N700099BFFBFCB (CS41077DWR16) Price
N700099BFFBFCB (CS41077DWR16) on stock A complete part number is represented by the digits below. Self-break- down voltages are expressed in kV. For example, TA-5.0 is_a 5kV TA series device and TB-25.0 is a 25kV TB series device. The TG-221 t0 226 are ordered by the appropriate part number as given in the specifications. significantly improves performance and reliability, while low- ering power consumption. They inherently use less energy during Erase and Program than alternative flash technolo- gies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program oper- ation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. |
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