| Parameters | Test Conditions | Symbol | Min | Typ | Max | Unit |
| Output power variation for the full temperature range | Tamb = -400C to +850 C, Vs = 3.0 V Vs = 2.0 V | APRef APRef | | | 1_5 -4O | dB dB |
| Output power variation for the full temperature range | Tamb = -400C to +1250 C, Vs = 3.0 V Vs = 2.0 V, POut = PRef + APRef | APRef APRef | | | -2.0 -4.5 | dB dB |
| Achievable output-power range | Selectable by load impedance | POut_typ | -3 | | +5.5 | dBm |
| Spurious emission | fCLK = fo/128 Load capacitance at Pin CLK = 10 pF fo +ix fCLK fo +4 x fCLK other spurious are lower | | | -52 -52 | | dBc dBc |
| Oscillator frequency XTO (= phase comparator frequency) | fXTO = fo/32 fXTAL = resonant frequency of the XTAL, CM {10 fF, load capacitance selected accordingly Tamb = -400C to +85aC, Tamb = -400C to +1250C | fXTO | -30 -40 | fXTAL | +30 +40 | ppm ppm |
| PLL loop bandwidth | | | | 250 | | kHz |
| Phase noise of phase comparator | Referred to fPC = fXTO, 25 kHz distance to carrier | | | -116 | -110 | dBc/Hz |
| In loop phase noise PLL | 25 kHz distance to carrier | | | -80 | -74 | dBc/Hz |
| Phase noise VCO | at l MHz at 36 MHz | | | -89 -120 | -86 -117 | dBc/Hz dBc/Hz |
| Frequency range of VCO | | fvco | 868 | | 928 | MHz |
| Clock output frequency (CMOS microcontroller compatible) | | | | fo/256 | | MHz |
| Voltage swing at Pin CLK | CLoad <10 pF | VOh Vol | VSX0 8 | | VSX0 2 | V V |
| Series resonance R of the crystal | | Rs | | | 1 10 | Q |
| Capacitive load at Pin XTO | | | | | 7 | pF |
| FSK modulation frequency rate | Duty cycle of the modulation signal = 50% | | O | | 32 | kHz |
| ASK modulation frequency rate | Duty cycle of the modulation signal = 50% | | O | | 32 | kHz |
| ENABLE input | Low level input voltage High level input voltage Input current high | Vll Vlh lln | 1.7 | | 0.25 20 | V V l.tA |
| PA_ENABLE input | Low level input voltage High level input voltage Input current high | Vll Vlh 11n | 1.7 | | 0.25 VS(1) 5 | V V UA |
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