N74F174D623 Datasheet 1. RAD HARD "S" EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data N74F174D623 Price| AO - A11 | Address | Row Address : RAO - RA11, Column Address : CAO - CA7 Auto-precharge flag : A10 | | BAO,BA1 | Bank Address | Selects bank to be activated during RAS activity Selects bank to be read/written during CAS activity | | DQO - DQ15 | Data Input/Output | Multiplexed data input / output pin | | CLK | Clock | The system clock input.AII other inputs are registered to the SDRAM on the rising edge of CLK | | CKE | Clock Enable | Controls internal clock signal and when deactivated,the SDRAM will be one of the states among power down,suspend or self refresh | | CS | Chip Select | Enables or disables all inputs except CLK, CKE and DQM | | RAS | Row Address Strobe | RAS,CAS and WE define the operation | | CAS | Column Address Strobe | Refer function truth table for details | | WE | Write Enable | | LDQM,UDQM | Data Input/Output Mask | Controls output buffers in read mode and masks input data in write mode | | VDDNss | Power Supply/Ground | Power supply for internal circuits and input buffers | | VDDQNssQ | Data Output Power/Ground | Power supply for output buffers | | NC | No Connection | No Connection | | | |
N74F174D623 on stock| | 8834750 TAG SMICONDUCTDRS LTD - -- - - 63C.00791 '- DT_A3 -- NN- -- --- -.--. - - ---- ---- - TAG SEMICONDUCTORS LTD 20410BE - 20410NE TRIACS - 4.OA 200-800V 25/25/25/25 mA The 20410 series of TRIAc's are high performance PNPN devices diffused with TAG's proprietary Top GlassTM Process.These parts q MTg are intended for general purpose TO'202-1 MTl applications where moderate gate sensitivity is required. Absolute Maximum Ratings TA= 25 0C unless otherwise noted ParameWr PartNr. Symbol Min. Max. Unit TastConditions RepetitivePeak 20410BE VDRM 200 V OffStateVoltage 20410DE 400 V -40aCt0125aC 20410ME 600 y [~jG--~'K<l 20410NE 800 V On-State Current IT(RMS) 4.0 A All Conduction Angles Tc = 75 0C Nonrept.On-StateCurrent ITSM 25 A HalfCycle,60Hz Nonrept.On-StateCurrent ITSM 22 A HalfCycle,60Hz FusingCurrent l2t 2.4 A25 t=10ms PeakGateCurrent IGM l.2 A 10psmax. . PeakGateDissipation PGM 3 W 10psmax. GateDissipation PG(AV) 0.2 W 20msmax. OperatingTemperature Tj' _ -40 125 0C StorageTemperature Tstg -40 150 0C Soldering Temperature Tsld 250 aC l.6 mm from case,10 s max. Electrical Characteristics TA = 25 aC unless otherwise noted Parameter Symbol MIn. Max. Unit TestConditions N Off_StateLeakageCurrent IDRM 200 pA yD=yDRMRGK=1KOTj=1250C 204 . Off-StateLeakageCurrent IDRM 5 pA yD=yDRMRGK=lK<lTj=250C On-StateVoltage VT 2.10 V atIT=6.OA,Tj=250C On-State Threshold Voltage VT(TO) 0.95 V Tj =125 aC On-StateSlopeResistance rT 180 mQ Tj=1250C GateTriggerCurrent lGTI+ (1) 25 mA VD-12V IGTI- (2) 25 mA VD=12V IGTIII-(3) 25 mA VD=12V IGT111+(4) 25 mA VD=12V GateTriggerVoltage VGT 2 V VD=12V AIIQuadrants HoldingCurrent IH 25 mA RGK=1KQ Critical Rate of Voltage Rise dv/dt 100 WLJs VD =.67xVDRM RGK=1 KQ Tj =125 0C Critical Rate of Rise, Off-State dv/dtc 4 V/FJs IT = 4A di/dt=1.78 A/ms Tc = 75 0C Thermal Resistance junc.to case ROje 7.5 K/W 60 K/W Thermal Resistance junc.to amb. ROja 133 | | | | | | | |
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled.
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