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N74F199N Datasheet

A B
Device nom max
RGE300 5.1 (0.20) 1.2 rD05)
RGE400 5.1 (0.20) 1.406)
RGE500 5.1 (0.20) 1.606)
RGE600 5.1 (0.20) 1.606)
RGE700 5.1 (0.20) 1 707)
RGE800 5.1 (0.20) 1.807)
RGE900 5.1 (0.20) 2.008)
RGE1000 5.1 (0.20) 2.008)
RGE1100 5.1 (0.20) 2.4 rD09)
RGE1200 10.2 (0.40) 1.506)
RGE1400 10.2 (0.40) 1.907)


N74F199N Price
The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from l.8 t0 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a final stage in CDMAorTDMAsystems.lon implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.
N74F199N on stock

Ti= 25'C -
l
| l C
k 50A
- 25A
1 5A-


SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V(BR)DG VGS(TO) IDSS IDSS IGSS +V(BR)GSS RDScON) VF -SF VHYS Drain-gate zener voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Gate source breakdown voltage Drain-source on-state resistance Forward voltage, temperature sense diodes Negative temperature coefficient, temperature sense diodes from 25 aC t0 140 aC Forward voltage hysteresis; temperature sense diodes 250uA; -55aC Tj 1750C VDS = VGS; ID = 1 mA; Tj = 175aC Tj = -550C VDS = +35 V; VGS = 0 V; Tj =175 aC VDS = +15 V; VGS = 0 V; Tj =175 0C VGS = +5 V; VDS = 0 V; Tj =175 0C +1 mA; VGS = 5 V; ID = 20 A Tj =175 aC IF = 250 uA; IF = 250 uA IF = 125 uA t0 250uA 38 1.0 0.5 10 685 1.26 25 43 1.5 0.1 0.004 0.02 16 710 1.4 2.0 2.3 100 250 2 250 1 10 20 42 735 1.54 50 V V V V cCA cCA cCA V l V mV mV/K mV


 
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