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N74F241 Datasheet

Drain to Source Voltage (Note l) Drain to Gate Voltage (RGS = 20k I ) (Note l) . Gate to Source Voltage . . . . . . . . Drain Current Continuous . . . . . . Pulsed Drain Current . . . . . . . . Pulsed Avalanche Rating . . . . . . . Power Dissipation . . . . Derate Above 250C . . . . . . . . . Operating and Storage Temperature . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 . .
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NOTE: 1. Internal reset operation means that the device initializes internal registers and makes output signals go to default status and bufferRAM data are kept unchanged after Warm/Hot reset operations. 2. Reset command : Command based reset or Register based reset 3. BP(Boot Partition): BootRAM area [OOOOh~OIFFh, 8000h~800Fh] 4. OOFOh for BP. and OOF3h for F220h
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Collector to base breakdown	V[BR}CBO	15			V	le = 10 ccA, IE = 0
voltage	V[BR}CBO	15			V	le = 10 ccA, IE = 0
Collector cutoff current	ICBO			1	cd\	VCB = 12 V, IE = 0
Collector cutoff current	ICEO			1	mA	VCE = 9 V, RBE =
Emitter cutoff current	IEBO			10		VEB = 1.5 V, lC = 0
DC current transfer ratio	hFE	40	120	250		VCE = 5 V, lC = 20 mA
Collector output capacitance	Cob		1.0	1.7	pF	VCB = 5 V, IE = 0, f= 1MHz
Gain bandwidth product	fT	5.5	8.0		GHz	VCE = 5 V, lC = 20 mA
Power gain	PG	7.5	10.5		dB	VCE = 5 V, lC = 20 mA, f = 900 MHz
Noise figure	NF		1.2	2.5	dB	VCE = 5 V, lC = 5 mA, f = 900 MHz

Items	Symbols	Test Conditions	Min	Typ	Max	Units
	Rtr,ri_c)	IGBT			0 085
Thermal Resistance	Rtr,ri_c)	Diode			0 22	oc/w
Thermal Resistance	Rtr,cc_f)	With Thermal Compound		O0125		oc/w

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