| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
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N74F547N N74F547N N74F547N Datasheet Rapid access to regions of interest is facilitated by use of a lateral charge drain. The drain is constructed adjacent to the horizontal CCD (HCCD) shift register. Unwanted lines of data are quickly dis- posed without the requirement for hori- zontal transfer. In this manner, entire lines ofimage data can be disposed of by a single vertical shift sequence, with a time penalty of 20 Us. This is to be contrasted with the normal read sequence which includes both the vertical shift (20 ps), plus readout of the 1130 horizontal elements (2260 ps). As the unwanted lines are transferred from storage region into the HCCD, the hori- zontal phases are held high to maintain a surface N74F547N N74F547N N74F547N Price
N74F547N N74F547N N74F547N on stock ( ) : 2SB881 Absolute Maximum Ratings at Ta =250C Collector-to-Base Voltage VCBO C ollector-to-E mitter Voltage VCEO Emitter-to-Base Voltage VEBO ColIector Current IC Collector Current (Pulse) ICP Collector Dissipation PC
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