| SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
| ICBO | collector cut-off current | IE = 0; VCB = -50 V | | -10 | nA |
| IE = 0; VCB = -50 V; Tamb = 125 IC | | -10 | |
| IEBO | emitter cut-off current | lc = 0; VEB = -5 V | | -50 | nA |
| hFE | DC current gain | lc = -0.1 rTiA; VCE = -1 V | 75 | | |
| lc = -1 rriA; VCE = -1 V | 100 | | |
| lc = -10 fliA; VCE = -1 V | 100 | | |
| lc = -150 mA; VCE = -2 V | 100 | 300 | |
| lc = -500 mA; VCE = -2 V | 50 | | |
| VCEsat | collector-emitter saturation | lc = -150 mA; lB = -15 mA | | -400 | mV |
| voltage | lc = -500 mA; lB = -50 mA | | -1.6 | V |
| VBEsat | base-emitter saturation voltage | lc = -150 mA; lB = -15 mA | | -1.3 | V |
| lc = -500 mA; lB = -50 mA | | -2.6 | V |
| Ce | collector capacitance | IE = ie = 0; VCB = -10 V; f= 1 MHz | | 8 | pF |
| Ce | emitter capacitance | lc = ic = 0; VEB = -500 mV; f= 1 MHz | | 35 | pF |
| fT | transition frequency | lc = -20 rriA; VCE = -10 V; f = 100 MHz | 200 | | MHz |
| Switching times (between 10% and 90% levels); (see Fig.2) |
| ton | turn-on time | ICon = -150 mA; IBon = -15 mA; | | 40 | ns |
| td | delay time | IBo = 15 mA | | 12 | ns |
| tr | rise time | | 30 | ns |
| toff | turn-off time | | 365 | ns |
| ts | storage time | | 300 | ns |
| tf | fall time | | 65 | ns |
| | | | | |
Several new features make the LT1 1 75 very user-friendly. The SHDN pin can inteyface directly to either positive or negative logic levels. Current limit is user-selectable at 200mA, 400mA, 600mA and 800mA The output can be forced to reverse voltage without damage or latchup. Unlike some earlier designs, the increase in quiescent current during a dropout condition is actively limited.
