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Notes :1. OP Code : Operand code Ao ~ A12 & BAo ~ BAi : Program keys. (@ MRS) 2. MRS can be issued only at all banks precharge state. A new command can be issued after 2 CLK cycles of MRS. 3. Auto refresh functions are as same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BAo ~ BAi : Bank select addresses. If both BAo and BAi are "Low" at read, write, row active and precharge, bank A is selected. If BAo is "High" and BAi is "Low" at read, write, row active and precharge, bank B is selected. If BAo is "Low" and BAi is "High" at read, write, row active and precharge, bank C is selected. If both BAo and BAi are "High" at read, write, row active and precharge, bank D is selected. If Aio/AP is "High" at row precharge, BAo and BAi is ignored and all banks are selected. 5. During burst read or write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 6. Burst stop command is valid at every burst length. 7. DQM sampled at positive going edge of a CLK and masks the data~in at the very CLK (Write DQM latency is O) but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)