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N74F583D N74F583D N74F583D Datasheet

Additional overlay memory is used for emulation of AD SP-2 109 systems. It should be noted that due to the use ofoff-chip overlay memory to emulate the AD SP-2 109, a performance loss may be experienced when both executing instructions and fetching program memory data from the off-chip overlay memory in the same cycle. T his can be overcome by locating program memory data in on-chip memory.
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Parameter		Symbol	Condition	MIN	TYP	MAX	Unit
Receiver block total characteristics
Total circuit current (RX)		lcc (RX-TOTAL)	No signal input	3.5	4.8	6	mA
Dark current at power save		lcc (PS-RX TOTAL}	VPS-RX " 0.3 V (Low), No signal input		O1	5
Power save	Rise time	TPS-RX (Rise)	VPS-RX = 0 V} 3V		2	5	08
response time	Fall time	l PSRXfFam	VPS-RX = 3 V}O V		2	5	08
Note 1 Power save low		VPS-RX (Low)		O		0 3	V
Note 2 Power save high		VPS-RX (High}		2.5		Vcc	V
Receiver block l (2nd down converter)
2nd MIX conversion gain		CG2ndMIX	Combining capacitance with SG	6	10	14	dB
1-dB compression output level		P1dB2ndMIX			93		dBccV
Input 3rd order intercept point		IIP3 (2ndMIX)	f2ndMIXini = 243.95 MHz, f2ndMIXin2 = 244.25 MHz		94		dB ccV
2nd MIX noise figure		NF2ndMIX	At l/0 LC matching		8		dB
2nd MIX local leak 1		ISL (2ndLO}1	Note 3 Pin 10 input -7-dBm input		52		dB ccV
2nd MIX local leak 2		ISL (2ndL0}2	Note 4 Pin 10 input -7-dBm input		24		dBccV
2nd MIX output resistance			Pin 20		330		l
Receiver block 2 (IF amplifier)
Limiting sensitivity		SL	-3 dB point		27	32	dBocVEM F
2nd IF amplifier gain		Gv	P2nciIFin = 13 dBocVEMF		80		dB
2nd IF amplifier phase shift		SP	Note 5 P2nciIFin = 63 t0 98 dBocVEMF		6		deg
2nd IF amplifier output amplitude		Vo	10 kl //10 pF	0.5	0.62	0 75	VP-P
2nd IF amplifier output rise time		lR			13	25	ns
2nd IF amplifier output fall time		tF			10	20	ns
2nd IF amplifier input resistance		Rin	Pin 16, Pin 17		330		l
2nd IF amplifier input capacitance		Cin	Pin 16, Pin 17		TBD		pF
2nd IF amplifier output duty ratio		Vo (duty)			52		%
2nd IF amplifier output bias level		Vo (DC)			1.5		V

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(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only and functional operation of the device at these or any other conditions beyond those specified is not implied.







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