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N74F649DT N74F649DT N74F649DT Datasheet

PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS
Source to Drain Diode Voltage (Note 2)	VSD	ISD= 7.5A			1 4	V
Diode Reverse Recovery Time	trr	ISD = 4A, dISD/dt = 100A/ffs		225		ns

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CLR	CSMSB	CSLSB	WR	LDAC	FUNCTION
L	×	×	X	X	Clears input and DAC registers to zero
H	×	×	X	L	Loads DAC register with contents of input registers
H	×	×	X	H	Freezes contents of DAC register
H	L	H	L	X	Writes MSB byte into MSB input register
H	H	L	L	X	Writes LSB byte into LSB input register
H	L	L	L	X	Writes MSB and LSB bytes into MSB and LSB input registers
H	X	X	H	×	Inhibits write to MSB and LSB input registers
H	H	X	X	X	Inhibits write to MSB input register
H	×	H	X	×	Inhibits write to LSB input register
H	L	L	L	L	Data bus flows directly through input and DAC registers

Stress	Results
Moisture Classification	Level l Package - No Drypack Required
ESD Sensitivity	Non-sensitive - No special handling required
Steady State Life	0/50 @ 250 C (1000 Hours)
Temperature Cycle	0/350 @ 1000 temp cycles (650 C t0 2000 C)
High Temperature Reverse Bias	0/350 @ 1250 C (1000 Hours)
Humidity	0/200 @ 850 C 85% Humidity (1000 hours)