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N74F74DT N74F74DT N74F74DT Datasheet

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Symbol	Parameter	Conditions	Ratings	Unit
VCES	Collector-emitter voltage	VGE= OV	400	v
VGES	Gate-emitter voltage	VCE = OV, See notice 4	±30	V
VGEM	Peak gate-emitter voltage	VCE = Oy tw = 0.5s	±40	V
ICM	Collector current (Pulsed)	See figure 1	130	A
Tj	Junction temperature		-40+150	IC
Tstg	Storage temperature		-40+150	IC

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Characteristics		Symbol	Test Condition	Min	Typ.	Max	Unit
Collector cut-off current		ICBO	VCB = 20 V, IE = 0			100	nA
Emitter cut-off current		IEBO	VEB = 7 V, lc = 0			100	nA
Collector-emitter breakdown voltage		V (BR) CEO	lc = 10 rTiA, lB = 0	10			V
		hFE (1)	VCE = 2 V, lc = 0.2 A	400		1000
DC current gain		hFE (2)	VCE = 2 V, lc = 0.6 A	200
Collector-emitter saturation voltage		VCE (sat)	lc = 0.6 A, lB = 12 mA			0 12	V
Base-emitter saturation voltage		VBE (sat)	lc = 0.6 A, lB = 12 mA			1 10	V
	Rise time	tr	See Figure l circuit diagram.		60
Switching time	Storage time	tstg	Vcc - 6 V, RL = 10Q		215		ns
Switching time	Fall time	tf	IBl = -lB2 = 12 mA		25		ns

This pin supplies voltage to the phase-locked loop circuitry, so use extra care to keep it stable This pin supplies voltage to the code RAM. Maintain at 5 volts to retain data in code RAM. NC pins must be unconnected to prevent accidental entry into a test mode.

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