suppliers of N74F74DTR N74F74DTR N74F74DTR and PDF data of N74F74DTR N74F74DTR N74F74DTR

Notes: 5. Test conditions assume signal transition time of 5 ns or less, timing reference levels of l.5V, input pulse levels of O t0 3.OV, and output loading of the specified IOL/IOH and 30-pF load capacitance. 6. tHZOE, tHZCE, tHZWE, arid tHZBE are specifed with a load capacitance of 5 pF as in part (b) ofAC Test Loads. Transition is measured +500 mV from steady-state voltage. 7. At any given temperature and voltage condition, tHZCE iS less than tl_ZCE, tnZOE is less than tl_ZOE, tHZWE iS less than tl_ZWE, and tHZBE iS less than ti_ZBE, forany given device 8. The internal write time of the memory is defined by the overla p of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any ofthese signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge ofthe signal that terminates the write. Refer to truth table for further conditions from BHE and BLE.