MOTMap-22  > N74F821N9203 N74F821N9203 N74F821N9203

suppliers of N74F821N9203 N74F821N9203 N74F821N9203 and PDF data of N74F821N9203 N74F821N9203 N74F821N9203

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  

N74F821N9203 N74F821N9203 N74F821N9203 Datasheet
(2) The technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license.
N74F821N9203 N74F821N9203 N74F821N9203 Price

Part Number TotaIDelay '. Nanosecond (1)
611-5 611-6 611-8 611-10 611-12 611-16 611-25 611-3 0 611-3 5 611-40 611-4 5 ' 611-50 611-60 611-75 611-100 611-125 611-150 611-176 611-200 611-250 5+1 8+2 10+2 12+2 16+2 25+2 30+2 35+2 40+2 45+2.2 50+2.5 60+3 753.5 100+5.0 1255.5 1506.0 175+8.7 200+10 250+12 5


N74F821N9203 N74F821N9203 N74F821N9203 on stock
The TC74AC08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate and double -layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage.

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 40 V
Collector-Base Voltage VCBO 60 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current Ic 600 mA
Power Dissipation at TA = 25aC Derate above 25aC Ptot 625 5.0 mW mW/oC
Power Dissipation at Tc = 25aC Derate above 25aC Ptot 1.5 12 mW mW/oC
Thermal Resistance Junction to Ambient Air RJA 200 0 c/w
Thermal Resistance Junction to Case ROJC 83.3 0 c/w
Junction Temperature Tj 150 IC
Storage Temperature Range Ts -55 to +150 IC