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N74F8965A Datasheet
Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time ofpublication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate allinformation as a total system before making a final decision on the applicability ofthe information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.
N74F8965A Price

Symbol mln typ max Unlt
WaveIEangth at peak emission LR S250 LS 8250 LY S250 LG S250 Apeak 645 620 580 545 660 635 590 565 675 650 600 575 nm nm nm nm
Dominant wavelength LR S250 LS S250 LY S250 LG S250 AdOm 645 628 592 564 nm nm nm nm
Vlewlng angle Llmlts for 500/o of luminous intensity Iv LR S250 2 140 1 deg deg
Forward voltage IF = 10 mA LR S250 2,0 1,6 2,6 2,0 V V
Reverse current Va =5V R 0,01 10
LumInous intensity IF = 10 mA IV 0,4 110 mcd
Dlode capacitance Vn o V, f =MHz LR S250 LS S250 LY S250 LG S250 CD 40 12 10 45 pF pF pF pF


N74F8965A on stock

Stage Pin (W) Pout (W) Rthccri_case) (oC/W) IDD @ r1T=35% (A) VDD (V)
1 0.05 2.0 4.5 0.45
2 2.0 12.0 2.4 2.80 12.5
3rd 12.0 45.0 1.2 6.80


1Q3 MAX . F536C\Z
POWER ArlPLIFIER APPLICATIOr.IS. f If f
J I ]
FEATURES: . Complementary t0 2SC790. . 10 Watts Output Applications. 3 rl W l [
vlAXIrlUM RATII4GS (Ta=250C) 1.5 MAX. 0 76 ilr U
CHARACTERISTIC SYMBOL RATING UNIT i
Collector - Base Voltage VCBO -50 v d I f I l 1 1 l
Collector-Emitter Voltage VCEO -40 V j
Emitter-Base Voltat:e VEBO -5 v
Collecor Current IC -3 A 1. BASE
Emitter Current Collector Power Dissipa- IE Pc 3 25 A w 2 COLLECTOR (HEAT SINK) 3 EltITTER
tion (Tc=25 0C) Junction Temperature Tj 150 oc JEDEO T0-2,20AB EIA SC-46
TOSHIBA Z-10 AIA
Storage Temperature Range Tstg -55N150 oC Mountinz Kit No. AC75