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N74LS139AN Datasheet

Speed Bins
Parameter List Symbol 55ns 70ns Units
Min Max Min Max
Read cycle time tRC 55 70 ns
Address access time tAA 55 70 ns
Chip select to output tco 55 70 ns
Output enable to valid output tOE 25 35 ns
LB, UB valid to data output tBA 55 70 ns
Chip select to low-Z output tLZ 10 10 ns
Read Output enable to low-Z output tOLZ 5 5 ns
LB, UB enable to low-Z output tBLZ 10 10 ns
Output hold from address change tOH 10 10 ns
Chip disable to high-Z output tHZ O 20 0 25 ns
OE disable to high-Z output tOHZ 0 20 0 25 ns
UB, LB disable to high-Z output tBHZ O 20 O 25 ns
Write cycle time twc 55 70 ns
Chip select to end of write tcw 45 60 ns
Address set-up time tAS O 0 ns
Address valid to end of write tAW 45 60 ns
Write pulse width tWP 40 50 ns
Write Write recovery time tWR O 0 ns
Write to output high-Z tWHZ O 20 0 20 ns
Data to write time overlap tDW 25 30 ns
Data hold from write time tDH O 0 ns
End write to output low-Z tow 5 5 ns
LB, UB valid to end of write tBW 45 60 ns


N74LS139AN Price

7C109B-20 7C1009B-20 7C109B-25 7C1009B-25 7C109B-35 7C1009B-35
Parameter Description Test Conditions Min Max Min Max Min Max Unit
VOH Output HIGH Voltage Vcc = Min., IOH = -4.0 mA 2.4 2.4 2.4 V
VOL Output LOW Voltage Vcc = Min., IOL = 8.0 mA 0.4 0.4 0.4 V
VIH Input HIGH Voltage 2.2 Vcc + 0.3 2.2 Vcc + 0.3 2.2 Vcc + 0.3 V
VIL Input LOW Voltage['] -0.3 0.8 -0.3 0.8 -0.3 0.8 V
IIX Input Load Current GND< Vi< Vcc -1 +1 1 +1 -1 +1
102 Output Leakage Current GND < Vi< Vcc, Output Disabled -5 +5 -5 +5 -5 +5 oA
IOS Output Short r,i Circuit Current[3] Vcc = Max., VOUT = GND -300 -300 -300 mA
lcc Vcc Operating Supply Current Vcc = Max., IOUT = 0 mA, f = fMAX = 1/tRC 75 70 60 mA
ISB1 Automatic CE Power-Down Current -TTL Inputs Max. Vcc, CEi > VIH or CE2 < VIL, VIN > VIH or VIN < VIL, f = fMAX 30 30 25 mA
ISB2 Automatic CE Max. Vcc, 10 10 10 mA
Power-Down Current -CMOS Inputs CEi > Vcc - 0.3V, or CE21 0.3V, VIN > VCC - 0.3V, or VIN < 0.3V, f = 0 L 2 mA


N74LS139AN on stock
Note l: Absolute Maximum Ratings are those values beyond which the of a device may be impaired. Note 2: +1 LSB = +0.0015% of full scale = +1 5.3ppm of full scale. Note 3: Using internal feedback resistor. Note 4: Guaranteed by design, not subject to test. Note 5: I(OUTl) with DAC register loaded to all Os. Note 6: Typical temperature coefficient is l OOppmflC. Note 7: IOUTl load = 100 I in parallel with 13pF. Note 8: T0 0.0015% for a full-scale change, measured from the falling edge of LD.

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/ANOD = 8 4
32 MIN
44 MAX
ANODE (Side View)
/L:ATHODE l. 18MAX. LEAD:0.7