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N74LVCC4245APW Datasheet

Characteristic	Symbol	Test condition	Min	Typ.	Max	Unit
Drain-source breakdown voltage	BVDSS	VGs=OV, ID=50ccA	650			V
		VDS=Max., Rating, VGS=OV			50
Zero gate voltage drain current	IDSS	VDs=0.8Max., Rating, VGs=OV, TC=125IC			200	mA
Static drain-source on resistance \noie)	RDS(ON)	VGS=10V, ID=4.OA		1.25	1.6	W
Forward transconductance \noie}	gfs	VDS=15V, ID=4.OA	3.0			S
Input capacitance	Ciss			1600
Output capacitance	Coss	VGS=OV, VDS=25V, f=lMHz		310		pF
Reverse transfer capacitance	Crss	VGS=OV, VDS=25V, f=lMHz		120		pF
Turn on delay time	td(on)	VDD=0.5BVDSS, ID=7.OA		25
Rise time	tr	(MOSFET switching		55
Turn off delay time	td(off)	time are essentially		80		nS
Fall time	tf	independent of operating temperature)		50		nS
Total gate charge (gate-source+gate-drain)	Qg	VGS=10V, ID=7.OA, VDs=0.5BVDSS (MOSFET			72
Gate source charge	Qgs	switching time are		9.3		nC
Gate drain (Miller) charge	Qgd	essentially independent of operating temperature)		29.3		nC

N74LVCC4245APW Price

-lK.I-I(:B':_¨I-l¨1¨-.0 LIMIT	PARAMrER	SYMBOL
-55 to +1250C	Storage Temperature	Tstg
-55 to +1250C	Operating Temperature (derating: Rg.4)	Top
160 mW	Electrical Power Dissipation (derating: Rg.4)	Ptot
110 mA	Continuous Forward Current (f~10 kHz)
150 mA	Peak Forward Current (duty cycle s50%, f>l MHz)	IFRM
2.0 V	Reverse Voltage
2600C	Soldering Temperature (2mm from the case for 10 sec)	Tsld
	I NI=] liIK ] ! N t:] e:c~ c=] ~k N	PARAMrER

N74LVCC4245APW on stock

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