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N80387X-OLD Datasheet

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N80387X-OLD Price
Switching regulator chips are available from compa- nies such as Linear Technology, Maxim, Micro Linear, and Motorola, among others. The driver lC typically in- cludes the low-on-resistance boost-current FET device on-chip, to minimize cost and complexity. However, such solutions still require a passive magnetic compo- nent (a transformer or inductor), and bulk current sup- ply capacitor.
N80387X-OLD on stock

Drain-source breakdown voltage V (BR)DSS V GS=O V, /D=1 mA 30 j
Gate threshold voltage V GS(th) V DS=V GS, /D=25 pA 1.2 1.6 2
Zero gate voltage drain current DSS V DS=30 V, V GS=O V, Tj=25 0C 0.1 1 pA
V DS=30 V, V GS=O V, Tj=125 aC 1 0 1 00
Gate-source leakage current GSS V GS=20 V, V DS=O V 1 0 1 00 nA
Drain-source on-state resistance DS(on) V GS=4.5 V, /D=30 A 11.2 14 ml
V GS=10 V, /D=35 A 7.8 9.4
Gate resistance G 1 l
Transconductance 9 fs I V Dsl>21/DIR DS(on)max, /D=35 A 26 53 S


The step-down case (Figure 5) differs from the step-up in that the inductor current flows through the load during both the charge and discharge periods of the inductor. Current through the switch should be limited to ~650mA in this mode. Higher current can be obtained by using an external switch (see Figure 6). The ILIM pin is the key to successful operation over varying inputs.