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N80C196000B16 Datasheet

Symbol	Value	Unit	Symbol	Value	Unit
Symbol	typ.	Unit	Symbol	typ.	Unit
Thermal resistance			Thermal capacitance
Rthl	0.1	K/W	Cthl	0.00002806	Ws/K
Rth2	0.184		Cth2	0.0001113
Rth3	0.306		Cth3	0.0001679
Rth4	1.207		Cth4	0.000547
Rth5	0.974		Cth5	0.001388
Rth6	0.251		Cth6	0.019

N80C196000B16 Price

PARAMETER	SYMBOL	TEST CONDITIONS		MIN	TYP	MAX	UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage	BVDSS	ID = 250GCA, VGS = OV (Figure 12)		60			V
Drain to Source Breakdown Voltage	BVDSS	ID = 2500cA, VGS = OV , TC = -400C (Figure 12)		55			V
Zero Gate Voltage Drain Current	lDSS	VDS = 55V, VGS = OV				1
Zero Gate Voltage Drain Current	lDSS	VDS = 50V, VGS = OV, TC = 1500C				250
Gate to Source Leakage Current	IGSS	VGS= +16V				±100	nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage	VGS(TH)	VGS = VDS, ID = 2500cA (Figure 11)		1		3	V
Drain to Source On Resistance	rDS(ON)	ID = 18A, VGS = 10V (Figures 9, 10)			0 052	0 063	l
		ID = 8A, VGS = 5V (Figure 9)			0 060	0 071	l
		ID = 8A, VGS = 4.5V (Figure 9)			0 064	0 075	l
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case	ROJC	T0-251AA, T0-252AA				3 06	oc/w
Thermal Resistance Junction to Ambient	ROJA	T0-251AA, T0-252AA				100	ocw
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time	tON	VDD = 30V, ID = 8A				153	ns
Turn-On Delay Time	Ld(ON)	VGS = 4.5V, RGS = 22 [ (Figures 15, 21, 22)			13		ns
Rise Time	tr				89		ns
Turn-Off Delay Time	'd(OFF)				22		ns
Fall Time	tf				37		ns
Turn-Off Time	tOFF					89	ns
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time	tON	VDD = 30V, ID = 18A				59	ns
Turn-On Delay Time	'd(ON)	VGS = 10V, RGS = 241			5.3		ns
Rise Time	tr	(Figures 16, 21, 22)			34		ns
Turn-Off Delay Time	od(OFF)				41		ns
Fall Time	tf				50		ns
Turn-Off Time	tOFF					136	ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge	Qg(TOT)	VGS = OV t0 10V	VDD = 30V,		12	15	nC
Gate Charge at 5V	Qg(5)	VGS= OV t0 5V	ID = 8A,		6.8	8.2	nC
Threshold Gate Charge	Qg(TH)	VGS= OV t0 1V	lg(REF) = 1.OmA (Figures 14, 19, 20)		0 54	0 65	nC
Gate to Source Gate Charge	Qgs				1.7		nC
Gate to Drain "Miller" Charge	Qgd				3		nC
CAPACITANCE SPECIFICATIONS
Input Capacitance	cISs	VDS = 25V, VGS = OV,			485		pF
Output Capacitance	LOSS	f= 1MHz (Figure 13)			130		pF
Reverse Transfer Capacitance	CRSS	f= 1MHz (Figure 13)			28		pF

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Chip Selection to End of Write Address Valid to End of Write Address Setup Time Write Pulse Width Write Recovery Time Write to Output in High Z Data to Write Time Overlap Data Hold from Write Time Output Disable to Output in High Z Output Active from End of Write

Speed (ns)	Ordering Code	Package Name	Package Type	Operating Range
5.8	CY74FCT163CTQCT	Q1	16-Lead (150-Mil) QSOP	Commercial
5.8	CY74FCT163CTSOC/SOCT	S1	16-Lead (300-Mil) Molded SOIC	Commercial
11.5	CY54FCT163TLMB	L61	20-Square Leadless Chip Carrier	Military

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