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N80C31BH1SF88 INTEL        338 

N80C31BH1SF88 Datasheet
12.12.01 Rev 2 All data sheets are subject to change without notice 1 3 ~2001 Maxwell Technologies All rights reserved.
N80C31BH1SF88 Price
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
N80C31BH1SF88 on stock
1 ) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switch- ing in the same direction, either HIGH or LOW (tOSLH = I tPLHm - tPLHnl, tOSHL = I tPHLm - tPHLnl) 2) Parameter guaranteed by design

Symbol Parameter Min Max Unit Note
VOH Output Level Output i H Level Voltage (IOUT = -5mA) 2.4 Vcc V
VOL Output Level Output i Li Level Voltage (IOUT= 4.2mA) 0 0.4 V
Icci Operating Current 60ns 110
Average Power Supply Operating Current 70ns 100 mA 1.2
(RAS, CAS, Address Cycling: tRC = tRC min) 80ns 90
Icc2 Standby Current (TTL) Power Supply Standby Current (RAS, CAS= Vm, DOUT = High-Z) 2 mA
ICC3 RAS-Only Refresh Current 60ns 110
Average Power Supply Current 70ns 100 mA 2
RAS-Only Refresh Mode (RAS Cycling, CAS = VIH, tRC = tRC rrii~ 80ns 90
ICC4 Fast Page Mode Current 60ns 110
Average Power Supply Current 70ns 100 mA 1.3
Fast Page Mode (RAS = VIL, AS, Address Cycling: tPC = tPC min) 80ns 90
lccs Standby Current (CMOS) 1 mA 5
Power Supply Standby Current (RAS, CAS >= Vcc - 0.2V , Dour=High-Z) 200 uA 4,5
ICC6 CAS-before-RAS Refresh Current 60ns 110
(tRC = tRC rriin) 70ns 100 mA
80ns 90
ICC7 Battery Back Up Current (Standby with CBR Refresh) (tRc=125us, tRAs<=lus, WE=VIH, CAS=VIL, OE, Address and DIN=VIH or VIL, Dour=High-Z) 300 uA 4,5
Iccs Standby Current RAS = VIH CAS = VIL DOUT = Enable 5 mA 1
1I(L) Input Leakage Current Any Input (OV<=VIN<=7V) -10 10 uA
IO(L) Output Leakage Current (DOUT is Disabled, OV<=Vour<=7V) -10 10 uA