N80L286-10S-12S-16S Datasheet DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature SizeTM " strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalanche charac- teristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. N80L286-10S-12S-16S Price| | | | | M27C800 | | | Symbol | Alt | Parameter | Test Condition | ·100 | ·120/150 | Unit | | Min | Max | Min | Max | | tAVQV | tACC | Address Valid to Output Valid | E = VIL, G = VIL | | 100 | | 120 | ns | | tBHQV | tST | BYTE High to Output Valid | E = VIL, G = VIL | | 100 | | 120 | ns | | ELQV | tCE | Chip Enable Low to Output Valid | G= VIL | | 100 | | 120 | ns | | tGLQV | tOE | Output Enable Low to Output Valid | E= VIL | | 50 | | 60 | ns | | tBLQZ(2) | tSTD | BYTE Low to Output Hi-Z | E = VIL, G = VIL | | 40 | | 50 | ns | | tEHQZ(2) | tDF | Chip Enable High to Output Hi-Z | G= VIL | O | 40 | 0 | 50 | ns | | tGHQZ(2) | tDF | Output Enable High to Output Hi-Z | E= VIL | 0 | 40 | 0 | 50 | ns | | tAXQX | tOH | Address Transition to Output Transition | E = VIL, G = VIL | 5 | | 5 | | ns | | BLQX | tOH | BYTE Low to Output Transition | E = VIL, G = VIL | 5 | | 5 | | ns | | | | | | | | | |
N80L286-10S-12S-16S on stock| UNIT | A max | A1 | A2 | A3 | bp | c | DO) | EO) | e | HE | L | Lp | Q | V | W | y | zo) | O | | mm | 2 0 | 0 21 0 05 | 1 80 1 65 | 0 25 | 0 38 0 25 | 0 20 0 09 | 6 4 6 0 | 5 4 5 2 | 0 65 | 7 9 7 6 | 1.25 | 1 03 0 63 | 0 9 0 7 | 0 2 | 0.13 | 0 1 | 1oo O55 | 80 oo | | | | | | | | | | | | | | | | | | | |
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