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N82C501ADPLCC Datasheet

Voltage Drop Per Element RB411D RB400D	VF	0.45V O53V	IFM = 0.5A TJ = 250C
Maximum DC Reverse Current At Rated DC Blocking Voltage	IR	lOOccA 4.OmA	TJ = 250C TJ = 1000C

N82C501ADPLCC Price

lDevice	Device Code*
K9F6408UOC	E6h

N82C501ADPLCC on stock

Parameter	Symbol	Value	Unit
Repetitive peak reverse voltage	VRRM	600	v
Continous forward current TC=250C TC=900C	F	29.2 19.6	A
Surge non repetitive forward current TC=250C, tp=10 ms, sine halfwave	/FSM	60
Maximum repetitive forward current TC=250C, tp limited by Tjmax, D=0.5	/FRM	45
Power dissipation TC=250C TC=900C	Ptot	83.3 47.2	W
Operating and storage temperature	TiTstq	·55+1 75	aC
Soldering temperature 1.6mm(0.063 in.) from case for 10s		255	aC

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
VCESM VCEO lc ICM lB IBM -IBM Ptot Tstg	Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature	VBE=OV Tris " 25 aC	-65	1500 800 5 8 3 5 4 45 150 150	V V A A A A A W aC oC